Very high performance integrated circuits

2011 ◽  
pp. 118-131
Author(s):  
A. Mears
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Very High

III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS

1990 ◽  
Vol 01 (03n04) ◽  
pp. 245-301 ◽  
Author(s):  
M.F. CHANG ◽  
P.M. ASBECK
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Growth Parameters ◽  
Bipolar Transistors ◽  
System Requirements ◽  
Potential Impact ◽  
Computational Systems ◽  
Very High

Recent advances in communication, radar and computational systems demand very high performance electronic circuits. Heterojunction bipolar transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. This paper reviews the present status of GaAs and InP-based HBT technologies and their applications to digital, analog, microwave and multifunction circuits. It begins with a brief review of HBT device concepts and critical epitaxial growth parameters. Issues important for device modeling and fabrication technologies are discussed. The paper then highlights the performance and the potential impact of HBT devices and integrated circuits in various application areas. Key prospects for future HBT development are also addressed.

A High Performance Submicrometer CMOS/SOI Technology Using Ultrathin Silicon Films on Simox

1987 ◽  
Vol 107 ◽  
Author(s):  
P.K. Vasudev ◽  
K.W. Terrill ◽  
S. Seymour
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Silicon Films ◽  
Ring Oscillator ◽  
Cmos Integrated Circuits ◽  
And Performance ◽  
High Transconductance ◽  
Soi Technology ◽  
Very High

AbstractThe use of ultrathin SIMOX wafers for fabricating submicrometer CMOS integrated circuits is described. It is demonstrated from ring oscillator speeds that properly designed devices can exhibit very high transconductance and performance superior to circuits using bulk Si.

scholarly journals Evaluation of Meshed Reference Planes for High Performance Applications

2000 ◽  
Vol 22 (3) ◽  
pp. 175-187 ◽  
Author(s):  
N. D. Codreanu ◽  
P. Svasta ◽  
V. Golumbeanu ◽  
L. Gál
Keyword(s):  
Integrated Circuits ◽  
High Frequency ◽  
High Speed ◽  
High Performance ◽  
Network Analyzer ◽  
High Frequencies ◽  
High Speeds ◽  
University Of Budapest ◽  
Very High Frequencies ◽  
Very High

The actual generations of integrated circuits are characterized, inter alia, by very high frequencies or very high speeds. The dramatic evolution ofthe semiconductor's technology establishes a greater “pressure” to the design and the manufacturing of the passive interconnection structure from PCB/MCM electronic modules. In these conditions the reference planes (power and ground planes) have a more and more important contribution. The paper intents to present the effect of different configuration reference planes on the characteristics of the high speed/high frequency interconnection lines. The first part deals with modeling and simulation of usual practical interconnection geometries. A computer modeling of meshed structures was realized and Spice models for a good compatibility with circuit simulators were obtained.S-,Y-,Z- parameters and radiation patterns were calculated, too. The second part contains measurements made by a vector network analyzer as regards to different practical configurations manufactured at Technical University of Budapest.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

KEMPER C688

Alloy Digest ◽  
2017 ◽  
Vol 66 (12) ◽  
Keyword(s):  
Corrosion Resistance ◽  
Physical Properties ◽  
Tensile Properties ◽  
Copper Alloy ◽  
High Performance ◽  
High Conductivity ◽  
Bend Strength ◽  
Very High

Abstract Alloy C688 is a high-performance copper alloy with very high conductivity. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and bend strength. It also includes information on corrosion resistance as well as forming and joining. Filing Code: Cu-867. Producer or source: Gebr. Kemper GmbH + Company KG Metallwerke.

KEMPER KHP7025

Alloy Digest ◽  
2017 ◽  
Vol 66 (10) ◽  
Keyword(s):  
Corrosion Resistance ◽  
Physical Properties ◽  
Tensile Properties ◽  
Copper Alloy ◽  
High Performance ◽  
High Conductivity ◽  
Bend Strength ◽  
Very High

Abstract Alloy KHP 7025 (UNS C70250) is a high-performance copper alloy with very high conductivity. Uses include connector springs, tabs, contact springs, switches, relays, and leadframes. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and bend strength. It also includes information on corrosion resistance as well as forming, machining, and joining. Filing Code: Cu-865. Producer or source: Gebr. Kemper GmbH + Company KG Metallwerke.

Use of activated carbon to remove undesirable residual amylase from refinery streams

2017 ◽  
pp. 96-103 ◽  
Author(s):  
Gillian Eggleston ◽  
Isabel Lima ◽  
Emmanuel Sarir ◽  
Jack Thompson ◽  
John Zatlokovicz ◽  
...  
Keyword(s):  
Activated Carbon ◽  
High Temperature ◽  
High Performance ◽  
Activated Carbons ◽  
Amylase Activity ◽  
Sugar Industry ◽  
End User ◽  
Customer Complaints ◽  
Carry Over ◽  
Very High

In recent years, there has been increased world-wide concern over residual (carry-over) activity of mostly high temperature (HT) and very high temperature (VHT) stable amylases in white, refined sugars from refineries to various food and end-user industries. HT and VHT stable amylases were developed for much larger markets than the sugar industry with harsher processing conditions. There is an urgent need in the sugar industry to be able to remove or inactivate residual, active amylases either in factory or refinery streams or both. A survey of refineries that used amylase and had activated carbon systems for decolorizing, revealed they did not have any customer complaints for residual amylase. The use of high performance activated carbons to remove residual amylase activity was investigated using a Phadebas® method created for the sugar industry to measure residual amylase in syrups. Ability to remove residual amylase protein was dependent on the surface area of the powdered activated carbons as well as mixing (retention) time. The activated carbon also had the additional benefit of removing color and insoluble starch.

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