scholarly journals Evaluation of Meshed Reference Planes for High Performance Applications

2000 ◽  
Vol 22 (3) ◽  
pp. 175-187 ◽  
Author(s):  
N. D. Codreanu ◽  
P. Svasta ◽  
V. Golumbeanu ◽  
L. Gál
Keyword(s):  
Integrated Circuits ◽  
High Frequency ◽  
High Speed ◽  
High Performance ◽  
Network Analyzer ◽  
High Frequencies ◽  
High Speeds ◽  
University Of Budapest ◽  
Very High Frequencies ◽  
Very High

The actual generations of integrated circuits are characterized, inter alia, by very high frequencies or very high speeds. The dramatic evolution ofthe semiconductor's technology establishes a greater “pressure” to the design and the manufacturing of the passive interconnection structure from PCB/MCM electronic modules. In these conditions the reference planes (power and ground planes) have a more and more important contribution. The paper intents to present the effect of different configuration reference planes on the characteristics of the high speed/high frequency interconnection lines. The first part deals with modeling and simulation of usual practical interconnection geometries. A computer modeling of meshed structures was realized and Spice models for a good compatibility with circuit simulators were obtained.S-,Y-,Z- parameters and radiation patterns were calculated, too. The second part contains measurements made by a vector network analyzer as regards to different practical configurations manufactured at Technical University of Budapest.

III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS

1990 ◽  
Vol 01 (03n04) ◽  
pp. 245-301 ◽  
Author(s):  
M.F. CHANG ◽  
P.M. ASBECK
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Growth Parameters ◽  
Bipolar Transistors ◽  
System Requirements ◽  
Potential Impact ◽  
Computational Systems ◽  
Very High

Recent advances in communication, radar and computational systems demand very high performance electronic circuits. Heterojunction bipolar transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. This paper reviews the present status of GaAs and InP-based HBT technologies and their applications to digital, analog, microwave and multifunction circuits. It begins with a brief review of HBT device concepts and critical epitaxial growth parameters. Issues important for device modeling and fabrication technologies are discussed. The paper then highlights the performance and the potential impact of HBT devices and integrated circuits in various application areas. Key prospects for future HBT development are also addressed.

scholarly journals AGENTS THAT CAUSE A HIGH FREQUENCY OF GENETIC CHANGE FROM [psi  +] TO [psi  -] IN SACCHAROMYCES CEREVISIAE

Genetics ◽  
1981 ◽  
Vol 98 (4) ◽  
pp. 691-711
Author(s):  
M F Tuite ◽  
C R Mundy ◽  
B S Cox
Keyword(s):  
Saccharomyces Cerevisiae ◽  
High Frequency ◽  
Guanidine Hydrochloride ◽  
Genetic Change ◽  
Phenotypic Change ◽  
Chromosomal Gene ◽  
High Frequencies ◽  
High Concentrations ◽  
Very High Frequencies ◽  
Very High

ABSTRACT The [psi] factor of yeast is cytoplasmically inherited. Singh, Helms and Sherman (1979) reported that high concentrations of KCl and of ethylene glycol induce the genetic change from [psi  +] to [psi  -]. In this study, the following agents have been shown to induce the same genetic change: guanidine hydrochloride at 1 mm, dimethyl sulfoxide at 2.5% v/v and ethanol or methanol at 10% v/v. It is likely that a number of other agents also cause the change, namely 2 m glycerol, m succinate, m glutamate and m MgCl2. Most of these agents induce the change at very high frequencies; with some, the frequency is 100%. Although the observed phenotypic change can also occur as a result of chromosomal gene mutation, no changes of this type were identified. Some of the agents also cause mutation from [rho  +] to [rho  -] and from killer to sensitive.

scholarly journals Hall Amplifier Nanoscale Device (HAND): Modeling, Simulations and Feasibility Analysis for THz Sensor

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1618 ◽  
Author(s):  
Karsenty ◽  
Mottes
Keyword(s):  
Integrated Circuits ◽  
Hall Effect ◽  
Feasibility Analysis ◽  
Analytical Models ◽  
Nanoscale Device ◽  
High Frequencies ◽  
New Device ◽  
Very High Frequencies ◽  
Very High ◽  
Hand Modeling

HAND (Hall Amplifier Nanoscale Device), a new nano-metric device, was designed, simulated, and modeled for feasibility analysis, with the challenge of combining a well-known macro effect into the nanoscale world. HAND is based on the well-known Hall Effect, and it may enable circuitry working at very high frequencies (tens of Tera-Hertz). The architecture, design, and simulations were performed while using Comsol Multi-Physics Package Software. Complementary accurate analytical models were developed to support the understanding of the device functionality, including treatment of specific phenomena, such as heat transfer, and mega-magnet feasibility inside integrated circuits. This new device, combining both the Hall Effect and nanoscale dimensions, holds the potential to change the computing rates in the microelectronics circuitry world, and can serve as a game changer.

Silicon Interposers Enable High Performance Capacitors

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001996-002010
Author(s):  
Sergey Savastiouk ◽  
Phil Marcoux ◽  
Jim Hewlett
Keyword(s):  
Thin Film ◽  
Power Supply ◽  
High Performance ◽  
Electrical Performance ◽  
High Frequencies ◽  
Embedded Capacitors ◽  
Thin Film Capacitors ◽  
Parallel Resonance ◽  
Very High Frequencies ◽  
Very High

Thin film capacitors without TSVs have been used previously. However, with the interconnect inductance being high, benefits of thin film capacitors have not been fully realized. TSV interposers with embedded capacitors provide the shortest electrical path between devices and power supply decoupling capacitors. TSVs with their very low inductance interconnects thus will enable very high electrical performance when integrated with embedded thin film capacitors. ALLVIA, on behalf of it's foundry customers, has been conducting studies of various capacitors on silicon interposers. The data presented in this paper shows after several thermal cycles that planar capacitors on silicon results in stable, reliable capacitors operating at very high frequencies. Unlike an issue of parallel resonance seen with chip capacitors, planar capacitors in interposers don't exhibit this property.

scholarly journals Design and simulation of high frequency colpitts oscillator based on BJT amplifier

2020 ◽  
Vol 10 (1) ◽  
pp. 160
Author(s):  
Khalid A. Humood ◽  
Omar A. Imran ◽  
Adnan M. Taha
Keyword(s):  
High Frequency ◽  
Rapid Development ◽  
Advanced Technology ◽  
Colpitts Oscillator ◽  
High Frequencies ◽  
Bipolar Junction Transistor ◽  
Barkhausen Criterion ◽  
Junction Transistor ◽  
Very High Frequencies ◽  
Very High

Frequency oscillator is one of the basic devices that can be used in most electrical, electronics and communications circuits and systems. There are many types of oscillators depending on frequency range used in an application such as audio, radio and microwave. The needed was appeared to use high and very high frequencies to make the rapid development of advanced technology Colpitts oscillator is one of the most common types of oscillator, it can be used for radio frequency (RF), that its output signal is often utilized at the basic of a wireless communication system in most application. In this research, a Colpitts oscillator is comprised from a bipolar junction transistor (BJT) amplifier with <strong>LC</strong> tank. This design is carrying out with a known Barkhausen criterion for oscillation. Firstly, is carried out using theoretical calculation. The secondary is carried out using simulation (Multisim 13). All the obtained result from the above two approaches are 10 MHz and 9.745 MHz respectively. This result is seen to be very encouraging.

scholarly journals High frequency fatigue

1929 ◽  
Vol 125 (796) ◽  
pp. 83-119 ◽  
Keyword(s):  
High Frequency ◽  
Armco Iron ◽  
Fatigue Tests ◽  
Air Pressure ◽  
Magnetic Method ◽  
High Frequencies ◽  
Electro Magnetic ◽  
Very High Frequencies ◽  
Annealed Copper ◽  
Very High

The object of these researches was to determine the effect of the frequency of alternation of stress on the fatigue limits of various metals. The work was carried out in the Engineering Laboratories, Oxford. Tests were made on rolled, normalised and hardened steel; rolled aluminium; annealed copper and normalised armco iron. The ordinary frequency employed in fatigue tests is 50 periods per second. Jenkin in 1924 carried out tests up to 2000 periods per second and in the research described in this paper tests were made at frequencies up to 20,000 periods per second. In all the higher frequency tests the specimen counted of a bar supported at the nodes, and vibrating freely- Jenkin used an electro-magnetic method to produce the vibrations, but this will not work for very high frequencies and a new method had to be invented. In the experiments now described fluctuations of air pressure acting directly on the specimen were used to make them vibrate and a number of methods were tried before a successful apparatus was evolved. The apparatus consists essentially of the two blowers used to vibrate the specimen. Each blower consisted of a small adjustable resonating chamber, into which air was admitted by a throttle valve in the back, while the front was closed by one face of the specimen. The portion of the specimen was so arranged that as it vibrated to and fro it alternately released the air pressure or allowed it to mount up in the chamber. The strains were calculated on the assumption that the bar vibrated freely and the only measurement necessary was the amplitude of vibration at the centre of the bar. Lord Rayleigh has shown how the strains may be calculated for a long, thin vibrating bar. But using the method of vibrating by air, the bars had to have a moderate with and for the biggest speeds they had to be short, so that Lord Rayleigh's theory was no longer sufficiently accurate. The experiments would have been impossible but for the assistance of Prof. Love, who explained how the known theory could be applied to bars of moderate with, such as could be used in our apparatus.

Modeling of High Performance 4H-SiC Emitter Coupled Logic Circuits

2014 ◽  
Vol 778-780 ◽  
pp. 1009-1012 ◽  
Author(s):  
Shakti Singh ◽  
Nourhan El Sayed ◽  
Hazem Elgabra ◽  
Tamador ElBoshra ◽  
Maisam Wahbah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Temperatures ◽  
High Speed ◽  
High Performance ◽  
Wide Band ◽  
Bipolar Transistors ◽  
Small Scale ◽  
Wide Band Gap ◽  
High Speeds ◽  
Wide Range

SiC, a wide band gap semiconductor, is capable of robust operation at temperatures well above 600°C. SiC bipolar transistors are well suited for applications at high temperatures as, unlike MOSFET, it does not have a critical gate oxide, and hence oxide reliability at high temperatures is not an issue. In this paper, the design of optimized emitter coupled logic technology circuits using 4H-SiC bipolar transistors is presented. The circuits work over a wide range of temperatures and power supply voltages at high speeds, demonstrating the potential of robust high speed ECL integrated circuits in SiC for small-scale logic applications.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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