Tunnel junctions to tunnel field-effect transistors—technologies, current transport models, and integration

2020 ◽  
pp. 237-256
Author(s):  
Ashok Srivastava ◽  
Muhammad Shamiul Fahad
Keyword(s):  
Field Effect ◽  
Tunnel Junctions ◽  
Field Effect Transistors ◽  
Current Transport ◽  
Transport Models

The Electrical Characterization of Single ZnO Nanowries Field-Effect Transistors

2010 ◽  
Vol 654-656 ◽  
pp. 1178-1181
Author(s):  
Hui Feng Li ◽  
Yun Hua Huang ◽  
Xiu Jun Xing ◽  
Jia Su ◽  
Yue Zhang
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Vacuum ◽  
Electrical Characterization ◽  
Current Transport ◽  
Zno Nanowire ◽  
Metal Materials ◽  
Scanning Electron

The electrical properties of single ZnO nanowire were researched in the chamber of a scanning electron microscope under high-vacuum conditions using nanomanipulator and measurement system. The result shows that ZnO nanowire resistivity was about 1.4 Ω•cm with Ohmic contact. The local change of electron density induced by Shottky contacts or Ohmic contact with tip and semiconductor/metal materials significantly affects the current transport through the nanowire. Single ZnO nanowire was configured as field effect transistors (FET) and based on metal tantalum (Ta) as electrodes show a pronounced n-type gate modulation with an electron concentration of ~1.0×1019 cm−3 and an electron mobility of ~52 cm2 /V s at a bias voltage of 1 V.

scholarly journals A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Dominique Drouin ◽  
Gabriel Droulers ◽  
Marina Labalette ◽  
Bruno Lee Sang ◽  
Patrick Harvey-Collard ◽  
...  
Keyword(s):  
Field Effect ◽  
Tunnel Junctions ◽  
Field Effect Transistors ◽  
3D Integration ◽  
Single Electron Transistors ◽  
Metal Insulator ◽  
Nanoelectronic Devices ◽  
Metal Insulator Metal ◽  
Oxide Tunnel ◽  
Electron Transistors

We present a versatile nanodamascene process for the realization of low-power nanoelectronic devices with different oxide junctions. With this process we have fabricated metal/insulator/metal junctions, metallic single electron transistors, silicon tunnel field effect transistors, and planar resistive memories. These devices do exploit one or two nanometric-scale tunnel oxide junctions based on TiO2, SiO2, HfO2, Al2O3, or a combination of those. Because the nanodamascene technology involves processing temperatures lower than 300°C, this technology is fully compatible with CMOS back-end-of-line and is used for monolithic 3D integration.

Current transport modeling of carbon nanotube field effect transistors

2009 ◽  
Vol 206 (7) ◽  
pp. 1569-1578 ◽  
Author(s):  
Ashok Srivastava ◽  
Jose M. Marulanda ◽  
Yao Xu ◽  
Ashwani K. Sharma
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transport Modeling ◽  
Current Transport
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