Low-dimension materials-based interlayer tunnel field-effect transistors: technologies, current transport models, and integration

2020 ◽  
pp. 257-278
Author(s):  
Muhammad Shamiul Fahad ◽  
Ashok Srivastava
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Transport ◽  
Transport Models ◽  
Low Dimension

The Electrical Characterization of Single ZnO Nanowries Field-Effect Transistors

2010 ◽  
Vol 654-656 ◽  
pp. 1178-1181
Author(s):  
Hui Feng Li ◽  
Yun Hua Huang ◽  
Xiu Jun Xing ◽  
Jia Su ◽  
Yue Zhang
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Vacuum ◽  
Electrical Characterization ◽  
Current Transport ◽  
Zno Nanowire ◽  
Metal Materials ◽  
Scanning Electron

The electrical properties of single ZnO nanowire were researched in the chamber of a scanning electron microscope under high-vacuum conditions using nanomanipulator and measurement system. The result shows that ZnO nanowire resistivity was about 1.4 Ω•cm with Ohmic contact. The local change of electron density induced by Shottky contacts or Ohmic contact with tip and semiconductor/metal materials significantly affects the current transport through the nanowire. Single ZnO nanowire was configured as field effect transistors (FET) and based on metal tantalum (Ta) as electrodes show a pronounced n-type gate modulation with an electron concentration of ~1.0×1019 cm−3 and an electron mobility of ~52 cm2 /V s at a bias voltage of 1 V.

Current transport modeling of carbon nanotube field effect transistors

2009 ◽  
Vol 206 (7) ◽  
pp. 1569-1578 ◽  
Author(s):  
Ashok Srivastava ◽  
Jose M. Marulanda ◽  
Yao Xu ◽  
Ashwani K. Sharma
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transport Modeling ◽  
Current Transport
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