Thermal effects in carbon nanotube VLSI interconnects

2016 ◽  
pp. 172-200
Author(s):  
Srivastava ◽  
Mohsin
Keyword(s):  
Carbon Nanotube ◽  
Thermal Effects ◽  
Vlsi Interconnects

Novel Fabrication of Carbon Nanotube Vias for VLSI Interconnects

2008 ◽  
Vol 14 (S2) ◽  
pp. 298-299
Author(s):  
J Wu ◽  
J Walenza-Slabe ◽  
M Mann ◽  
KBK Teo ◽  
WI Milne ◽  
...  
Keyword(s):  
New Mexico ◽  
Carbon Nanotube ◽  
Vlsi Interconnects

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Bundled SWCNT for Global VLSI Interconnects

2020 ◽  
pp. 160-188
Author(s):  
Raj Kumar ◽  
Shashi Bala
Keyword(s):  
Mechanical Properties ◽  
Carbon Nanotube ◽  
Transition Time ◽  
Equivalent Model ◽  
Suitable Material ◽  
Vlsi Interconnects ◽  
Copper Interconnect ◽  
Parallel Lines ◽  
Bus Architecture ◽  
Interconnect Material

Carbon nanotube (CNT) has been declared the most attractive and suitable material for VLSI sub-micron technology. Because of CNT's phenomenal physical, electrical, and mechanical properties, it is more advantageous than copper interconnect material. In this chapter, RLC equivalent model of bundled single-wall CNT (SWCNT) is presented by using driver-interconnect-load (DIL) system with CMOS driver. The crosstalk delay is calculated for two-line bus architecture made of two parallel lines (i.e., upper as aggressor and lower as victim). From the simulation, it has been observed that crosstalk delay increases with increase in interconnect length and transition time, whereas it decreases with increased spacing between the lines (aggressor and victim). However, crosstalk delay decreases as the number of tubes in a bundle increases.

Horizontal carbon nanotube interconnects for advanced integrated circuits.

2013 ◽  
Vol 1559 ◽  
Author(s):  
Jean Dijon ◽  
Nicolo Chiodarelli ◽  
Adeline Fournier ◽  
Hanako Okuno ◽  
Raphael Ramos
Keyword(s):  
Carbon Nanotube ◽  
Integrated Circuits ◽  
Contact Resistance ◽  
Unit Length ◽  
Specific Contact Resistance ◽  
Wafer Surface ◽  
Integration Scheme ◽  
Vlsi Interconnects ◽  
Specific Contact ◽  
Individual Tube

ABSTRACTHorizontal carbon nanotube (CNT) interconnects are fabricated using a novel integration scheme yielding record wall densities >1013 shell/cm2, i.e. close to the density required for implementation in advanced integrated circuits. The CNTs are grown vertically from individual via structure and subsequently flipped onto the horizontal wafer surface. Various electrode designs are then used to produce different geometries of metal-to-tube contact such as side contact or end contact. CNT lines - 50 to 100 nm wide and up to 20 µm long - are realized and electrically characterized. The sum of the contact resistances from both ends of the lines is close to 500 Ω for 100 nm diameter lines which leads to a specific contact resistance of 1.6 10-8 Ω.cm2 per tube. With the developed technology, post-annealing of the contact does not improve the resistance values. Both chromium and palladium are used as contact metal. While contact resistance is equivalent with the two metals, the resistance per unit length of the lines does change and is better with palladium. This dependence is explained using a tunnelling model which shows that statistics of individual tube-metal contact is required to properly model the electrical results. Direct experimental evidences showing that only a part of the CNTs in the bundle is electrically connected are also given. Our best line resistivity achieved is 1.6mΩ.cm which is among the best results published for horizontally aligned CNTs and the only one with a realistic geometry for future VLSI interconnects.

Nonlocal Modeling and Behavior of Carbon Nanotube-Based Sensors in Thermal Environment

2018 ◽  
Author(s):  
Seyedeh Sepideh Ghaffari ◽  
Samantha Ceballes ◽  
Abdessattar Abdelkefi
Keyword(s):  
Carbon Nanotube ◽  
Thermal Effects ◽  
Thermal Environment ◽  
Nonlocal Parameter ◽  
Nonlocal Theory ◽  
Small Scale ◽  
Mass Sensor ◽  
Buckling Behavior ◽  
Mass Detector ◽  
And Behavior

An exact solution that investigates the pre-buckling characteristics of nonlocal carbon nanotube (CNT)-based mass sensor subjected to thermal load under clamped-clamped boundary condition is determined. The uniform temperature rise is utilized to study thermal effects on the sensitivity of the mechanical resonator in pre-buckling configuration. Using Eringen’s nonlocal theory, along with the Hamilton’s principle, the governing equations considering small scale and geometric nonlinearity are derived. The influences of important parameters including nonlocal parameter, temperature change, length, and diameter of the CNT on the pre-buckling behavior and frequency shift of the CNT-based mass detector are also studied. Results show that these parameters have significant impact on the dynamic characteristics of the CNT-mass sensor.

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