scholarly journals Vacuum‐free fabrication of a low‐voltage multi‐bit memory device based on a ferroelectric polymer and photosensitive film

2019 ◽  
Vol 14 (2) ◽  
pp. 202-205
Author(s):  
Woo Young Kim
Keyword(s):  
Low Voltage ◽  
Memory Device ◽  
Ferroelectric Polymer ◽  
Photosensitive Film

Low-voltage electro-optical memory device based on NiO nanorods dispersed in a ferroelectric liquid crystal

RSC Advances ◽  
2016 ◽  
Vol 6 (59) ◽  
pp. 53873-53881 ◽  
Author(s):  
Achu Chandran ◽  
Jai Prakash ◽  
Jitendra Gangwar ◽  
Tilak Joshi ◽  
Avanish Kumar Srivastava ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Low Power ◽  
Nickel Oxide ◽  
Nonvolatile Memory ◽  
Low Voltage ◽  
Optical Memory ◽  
Memory Device ◽  
Ferroelectric Liquid Crystal ◽  
Oxide Nanorods ◽  
Nonvolatile Memory Device

A low-power nonvolatile memory device is fabricated by dispersing nickel oxide nanorods (nNiO) into a ferroelectric liquid crystal (FLC) host. The dipolar nNiO adsorbed ions in the FLC and thereby reduced the screening effect, which resulted in the enhanced memory behavior.

Solution-processed conformal coating of ferroelectric polymer film and its application to multi-bit memory device

2016 ◽  
Vol 160 ◽  
pp. 68-72 ◽  
Author(s):  
Woo Young Kim ◽  
Hyun Bin Shim ◽  
Gwang-Jae Jeon ◽  
In-Ku Kang ◽  
Hee Chul Lee
Keyword(s):  
Polymer Film ◽  
Memory Device ◽  
Solution Processed ◽  
Conformal Coating ◽  
Ferroelectric Polymer

Investigation of Switching Phenomenon in Metal-Tantalum Oxide Interface

2015 ◽  
Vol 15 (10) ◽  
pp. 7564-7568 ◽  
Author(s):  
Abbas Yawar ◽  
Mi Ra Park ◽  
Quanli Hu ◽  
Woo Jin Song ◽  
Tae-Sik Yoon ◽  
...  
Keyword(s):  
Low Voltage ◽  
Tantalum Oxide ◽  
High Resistance State ◽  
Amorphous Layer ◽  
Memory Device ◽  
Ohmic Conduction ◽  
Oxide Interface ◽  
Bipolar Switching ◽  
Switching Phenomenon ◽  
Resistance State

To investigate the nature of the switching phenomenon at the metal-tantalum oxide interface, we fabricated a memory device in which a tantalum oxide amorphous layer acted as a switching medium. Different metals were deposited on top of the tantalum oxide layer to ensure that they will react with some of the oxygen contents already present in the amorphous layer of the tantalum oxide. This will cause the formation of metal oxide (MOx) at the interface. Two devices with Ti and Cu as the top electrodes were fabricated for this purpose. Both devices showed bipolar switching characteristics. The SET and RESET voltages for the Ti top electrode device were ∼+1.7 V and ∼−2 V, respectively, whereas the SET and RESET voltages for the Cu top electrode device were ∼+0.9 V and ∼−0.9 V, respectively. In the high-resistance state (HRS) conduction, the mechanisms involved in the devices with Ti and Cu top electrodes were space-charge limited conduction (SCLC) and ohmic, respectively. On the other hand, in the low-resistance state (LRS), the Ti top electrode device undergoes SCLC at a high voltage and ohmic conduction at a low voltage, and the Cu top electrode again undergoes ohmic conduction. From the consecutive sweep cycles, it was observed that the SET voltage gradually decreased with the sweeps for the Cu top electrode device, whereas for the Ti top electrode device, the set voltage did not vary with the sweeps.

Low Voltage Operation of High-κ HfO2/TiO2/Al2O3Single Quantum Well for Nanoscale Flash Memory Device Applications

2008 ◽  
Vol 47 (3) ◽  
pp. 1818-1821 ◽  
Author(s):  
Siddheswar Maikap ◽  
Ting-Yu Wang ◽  
Pei-Jer Tzeng ◽  
Heng-Yuan Lee ◽  
Cha-Hsin Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Flash Memory ◽  
Low Voltage ◽  
Memory Device ◽  
Low Voltage Operation ◽  
Device Applications

Organic low voltage rewritable memory device based on PEDOT:PSS/f-MWCNTs thin film

2012 ◽  
Vol 13 (11) ◽  
pp. 2582-2588 ◽  
Author(s):  
José A. Ávila-Niño ◽  
Wagner S. Machado ◽  
Alan O. Sustaita ◽  
E. Segura-Cardenas ◽  
M. Reyes-Reyes ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Memory Device

Fabrication of stable low voltage organic bistable memory device

2012 ◽  
Vol 161 (1) ◽  
pp. 684-688 ◽  
Author(s):  
CH.V.V. Ramana ◽  
M.K. Moodely ◽  
V. Kannan ◽  
A. Maity ◽  
J. Jayaramudu ◽  
...  
Keyword(s):  
Low Voltage ◽  
Memory Device

AC and DC voltage electrowetting on ferroelectric polymer for low voltage applications

2020 ◽  
Author(s):  
Pranjali Yedewar ◽  
Sandip Wadhai ◽  
Arun Banpurkar
Keyword(s):  
Low Voltage ◽  
Dc Voltage ◽  
Ferroelectric Polymer
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