Organic low voltage rewritable memory device based on PEDOT:PSS/f-MWCNTs thin film

2012 ◽  
Vol 13 (11) ◽  
pp. 2582-2588 ◽  
Author(s):  
José A. Ávila-Niño ◽  
Wagner S. Machado ◽  
Alan O. Sustaita ◽  
E. Segura-Cardenas ◽  
M. Reyes-Reyes ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Memory Device

Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Memory Device ◽  
Confinement Effect ◽  
Film Polymer ◽  
Polymer Memory

Physical and Optical Properties of The Films Ð’i2Te3-Bi2Se3

2015 ◽  
Vol 11 (2) ◽  
pp. 3017-3022
Author(s):  
Gurban Akhmedov
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Surface Temperature ◽  
Thermal Evaporation ◽  
Low Voltage ◽  
Internal Surface ◽  
Differential Resistance ◽  
Work Cycle

Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.  As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Show that, thermo endurance - T0 maybe using as characteristic of thermo endurance of optic materials. If heating flow, destruction temperature and internal surface temperature is measured during test, it is possible to determine value T0 and other necessity characteristics. As a result of the taking test was lead to comparison evaluation of considered materials. Working range of heating flow and up level heating embark have been determined.

scholarly journals P‐10.1: Low‐voltage flexible thin‐film transistor based on C 3 N 4 /polyvinylpyrrolidone composite electrolyte

2021 ◽  
Vol 52 (S1) ◽  
pp. 566-569
Author(s):  
Yao-Hua Yang ◽  
Qi Chen ◽  
Xi-Feng Li ◽  
Jian-Hua Zhang ◽  
Jun Li
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Composite Electrolyte

scholarly journals Low‐Voltage Magnetoelectric Coupling in Fe 0.5 Rh 0.5 /0.68PbMg 1/3 Nb 2/3 O 3 ‐0.32PbTiO 3 Thin‐Film Heterostructures

2021 ◽  
pp. 2105068
Author(s):  
Wenbo Zhao ◽  
Jieun Kim ◽  
Xiaoxi Huang ◽  
Lei Zhang ◽  
David Pesquera ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Magnetoelectric Coupling

scholarly journals Advanced Electrode Design for Low-Voltage High-Speed Thin-Film Lithium Niobate Modulators

2021 ◽  
Vol 13 (2) ◽  
pp. 1-9
Author(s):  
Xingrui Huang ◽  
Yang Liu ◽  
Zezheng Li ◽  
Huan Guan ◽  
Qingquan Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Lithium Niobate ◽  
High Speed ◽  
Low Voltage ◽  
Electrode Design

Low-voltage operation of the organic thin film transistor with a diagonal configuration

2003 ◽  
Author(s):  
Toshihide Kamata ◽  
Manabu Yoshida ◽  
Sei Uemura ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Low Voltage Operation

Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors

2016 ◽  
Vol 18 (12) ◽  
pp. 8522-8528 ◽  
Author(s):  
Yun-Seo Choe ◽  
Mi Hye Yi ◽  
Ji-Heung Kim ◽  
Yun Ho Kim ◽  
Kwang-Suk Jang
Keyword(s):  
Thin Film ◽  
Maleic Anhydride ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Surface Grafting ◽  
Gate Insulators ◽  
Poly Ethylene

We report the surface grafting of octylamine onto a poly(ethylene-alt-maleic anhydride) (PEMA) gate insulator for enhancing the performance of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors.

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