scholarly journals To reduce the passivation layer of Cu substrate by the ultrasonic assisted electrochemical potential activation method

2021 ◽  
Author(s):  
Zhong Zhao ◽  
Pengcheng Zhu
Keyword(s):  
Electrochemical Potential ◽  
Activation Method ◽  
Passivation Layer ◽  
Cu Substrate ◽  
Ultrasonic Assisted

Comments on the subliminal psychodynamic activation method.

1989 ◽  
Vol 44 (11) ◽  
pp. 1421-1422 ◽  
Author(s):  
Michael D. Figueroa
Keyword(s):  
Activation Method

A New Tailored UV Based Surface Activation Method for Bonding to Thermoplastics

2019 ◽  
Author(s):  
Sina Chaeichian ◽  
Kaspar Schaerer ◽  
Ruairi O’Kane ◽  
Michael Halbasch
Keyword(s):  
Activation Method ◽  
Surface Activation

Shear Strength and Dsc Analysis of High-Temperature Solders

2013 ◽  
Vol 58 (2) ◽  
pp. 529-533 ◽  
Author(s):  
R. Koleňák ◽  
M. Martinkovič ◽  
M. Koleňáková
Keyword(s):  
Shear Strength ◽  
High Temperature ◽  
Lead Free ◽  
Dsc Analysis ◽  
Ultrasonic Activation ◽  
Metallic Substrates ◽  
Cu Substrate ◽  
Lead Free Solders

The work is devoted to the study of shear strength of soldered joints fabricated by use of high-temperature solders of types Bi-11Ag, Au-20Sn, Sn-5Sb, Zn-4Al, Pb-5Sn, and Pb-10Sn. The shear strength was determined on metallic substrates made of Cu, Ni, and Ag. The strength of joints fabricated by use of flux and that of joints fabricated by use of ultrasonic activation without flux was compared. The obtained results have shown that in case of soldering by use of ultrasound (UT), higher shear strength of soldered joints was achieved with most solders. The highest shear strength by use of UT was achieved with an Au-20Sn joint fabricated on copper, namely up to 195 MPa. The lowest average values were achieved with Pb-based solders (Pb-5Sn and Pb-10Sn). The shear strength values of these solders used on Cu substrate varied from 24 to 27 MPa. DSC analysis was performed to determine the melting interval of lead-free solders.

Studies on a Novel Qualification Method of Silicon Nitride Layer

2016 ◽  
Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Substrate ◽  
Nitride Layer ◽  
Passivation Layer ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Si3n4 Layer ◽  
Silicon Nitride Layer ◽  
Passivation Layers ◽  
Pinhole Test

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.

Ultrasonic-Assisted Surface- Modification of Nanosilica Chloride and its Use for Synthesis of 3,4- Dihydropyrimidinones

2014 ◽  
Vol 11 (5) ◽  
pp. 361-367 ◽  
Author(s):  
Mahgol Tajbakhsh ◽  
Yousef Ranjbar ◽  
Abdolhosein Masuodi ◽  
Parizad Rezaee ◽  
Mahmood Tajbakhsh ◽  
...  
Keyword(s):  
Surface Modification ◽  
Ultrasonic Assisted
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