scholarly journals Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology

2013 ◽  
Vol 2013 (9) ◽  
pp. 45-47 ◽  
Author(s):  
N. Wakama ◽  
D. Okabayashi ◽  
T. Noda ◽  
K. Sasagawa ◽  
T. Tokuda ◽  
...  
2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.


1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1050-1053 ◽  
Author(s):  
Masayasu Miyake ◽  
Toshio Kobayashi ◽  
Yutaka Sakakibara ◽  
Kimiyoshi Deguchi ◽  
Mitsutoshi Takahashi

2008 ◽  
Vol 47 (7) ◽  
pp. 5390-5395 ◽  
Author(s):  
Koichi Mizobuchi ◽  
Satoru Adachi ◽  
Jose Tejada ◽  
Hiromichi Oshikubo ◽  
Nana Akahane ◽  
...  

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DL04 ◽  
Author(s):  
Arata Nakajima ◽  
Toshihiko Noda ◽  
Kiyotaka Sasagawa ◽  
Takashi Tokuda ◽  
Yasuyuki Ishikawa ◽  
...  

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