Optical and noise characteristics of amorphous Si/SiC superlattice reach-through avalanche photodiodes

1990 ◽  
Vol 37 (8) ◽  
pp. 1804-1809 ◽  
Author(s):  
J.-W. Hong ◽  
W.-L. Laih ◽  
Y.-W. Chen ◽  
Y.-K. Fang ◽  
C.-Y. Chang ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Noise Characteristics ◽  
Amorphous Si

Amorphous Si/SiC phototransistors and avalanche photodiodes

1991 ◽  
Vol 138 (3) ◽  
pp. 226 ◽  
Author(s):  
C.Y. Chang ◽  
J.W. Hong ◽  
Y.K. Fang
Keyword(s):  
Avalanche Photodiodes ◽  
Amorphous Si

NOISE CHARACTERISTIC AND QUALITY INVESTIGATION OF ULTRAFAST AVALANCHE PHOTODIODES

2007 ◽  
Vol 07 (03) ◽  
pp. L379-L389
Author(s):  
SANDRA PRALGAUSKAITĖ ◽  
VILIUS PALENSKIS ◽  
JONAS MATUKAS ◽  
AUGUSTINAS VIZBARAS
Keyword(s):  
Avalanche Photodiodes ◽  
Low Frequency ◽  
Noise Characteristic ◽  
Frequency Noise ◽  
Design Development ◽  
Physical Processes ◽  
Device Structure ◽  
Noise Characteristics ◽  
Carrier Multiplication ◽  
Noise Factors

A detailed study of photosensitivity and noise characteristics of ultrafast InGaAsP / InP avalanche photodiodes (APDs) with separate absorption, grading, charge and multiplication regions was carried out. Carrier multiplication and noise factors were evaluated. Noise origin in investigated APDs is 1/f, generation-recombination and shot noises. Different quality samples have been investigated and it is shown that noise characteristics well reflect APD quality problems. It is shown that low-frequency noise and excess shot noise characteristics are very sensitive to the APD quality problems and clear up physical processes in device structure. Noise characteristic analyses can be used for the APD quality problems revealing and optimal design development.

scholarly journals Impact-ionization and noise characteristics of thin III-V avalanche photodiodes

2001 ◽  
Vol 48 (12) ◽  
pp. 2722-2731 ◽  
Author(s):  
M.A. Saleh ◽  
M.M. Hayat ◽  
P.P. Sotirelis ◽  
A.L. Holmes ◽  
J.C. Campbell ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Noise Characteristics

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part I: Spectral Response

2019 ◽  
Vol 9 (2) ◽  
pp. 172-184
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Optical Pulse ◽  
Near Infrared ◽  
Spectral Response ◽  
Avalanche Photodiodes ◽  
Operating Conditions ◽  
Excess Noise ◽  
Multiple Quantum ◽  
Material System ◽  
Frequency Responses ◽  
Noise Characteristics

Background: The spectral response of Multiple Quantum Barrier (MQB) nano-scale avalanche photodiodes (APDs) based on Si~3C-SiC material system shows considerable responsivity of the device within a very wide wavelength range which includes some portion of Ultra- Violet (UV) spectrum (200- 90 nm), visible spectrum (390-770 nm), near-infrared (700-1400 nm), short-wavelength infrared (1400-3000 nm) and mid-infrared (3000-4000 nm) wavelengths. It has already been concluded from preceding studies that Si~3C-SiC MQB APDs shows better spectral response and excess noise characteristics as compared to equivalent conventional APDs based on Si. Moreover, the superiority of the illumination through p+-side (ITPS) structure has been observed among two probable optical illumination configurations such as illumination through n+- side (ITNS) and illumination through p+-side (ITPS) structures. Methods: In this paper, the time and frequency responses of Si~3C-SiC MQB APDs have been investigated. A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incident on the p+-side of the MQB APD structures (i.e. ITPS is considered here) and corresponding current responses have been calculated by using a rigorous simulation method developed by the authors; finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Results: The width of the current responses are limited to 4.7 and 3.1 ps in Si nano-APD and Si~3C-SiC MQB (consisting of five quantum barriers) nano-APD respectively for the input optical pulse of width 0.4 ps of 850 nm wavelength. On the other hand, the 3 dB upper cut-off frequencies of the above-mentioned diodes are obtained to be 68.63 and 82.64 GHz respectively. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

scholarly journals Excess noise characteristics of Al/sub 0.8/Ga/sub 0.2/As avalanche photodiodes

2002 ◽  
Vol 14 (4) ◽  
pp. 522-524 ◽  
Author(s):  
B.K. Ng ◽  
J.P.R. David ◽  
R.C. Tozer ◽  
M. Hopkinson ◽  
G. Hill ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Excess Noise ◽  
Noise Characteristics

scholarly journals Noise Improvement of a-Si Microbolometers by the Post-Metal Annealing Process

Sensors ◽  
2021 ◽  
Vol 21 (20) ◽  
pp. 6722
Author(s):  
Jaesub Oh ◽  
Hyeong-sub Song ◽  
Jongcheol Park ◽  
Jong-Kwon Lee
Keyword(s):  
Noise Analysis ◽  
Annealing Process ◽  
Hydrogen Passivation ◽  
Temperature Coefficient Of Resistance ◽  
Noise Characteristics ◽  
Current Path ◽  
Reference Device ◽  
Before And After ◽  
Uniform Current ◽  
Amorphous Si

To realize high-resolution thermal images with high quality, it is essential to improve the noise characteristics of the widely adopted uncooled microbolometers. In this work, we applied the post-metal annealing (PMA) process under the condition of deuterium forming gas, at 10 atm and 300 °C for 30 min, to reduce the noise level of amorphous-Si microbolometers. Here, the DC and temperature coefficient of resistance (TCR) measurements of the devices as well as 1/f noise analysis were performed before and after the PMA treatment, while changing the width of the resistance layer of the microbolometers with 35 μm or 12 μm pixel. As a result, the microbolometers treated by the PMA process show the decrease in resistance by about 60% and the increase in TCR value up to 48.2% at 10 Hz, as compared to the reference device. Moreover, it is observed that the noise characteristics are improved in inverse proportion to the width of the resistance layer. This improvement is attributed to the cured poly-silicon grain boundary through the hydrogen passivation by heat and deuterium atoms applied during the PMA, which leads to the uniform current path inside the pixel.

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part II: Excess Noise Characteristics

2019 ◽  
Vol 9 (2) ◽  
pp. 185-191
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Avalanche Photodiodes ◽  
Noise Factor ◽  
Excess Noise ◽  
Multiple Quantum ◽  
Noise Performance ◽  
Excess Noise Factor ◽  
Simulation Methodology ◽  
Noise Characteristics ◽  
Good Agreement ◽  
Ionization Rates

Background: Excess noise characteristics of Multiple Quantum Barrier (MQB) nanoscale avalanche photodiodes (APDs) based on Si~3C-SiC heterostructures have been studied in this part of the paper. The multiplication gain and Excess Noise Factor (ENF) of the MQB APDs have been calculated by varying the number of Quantum Barriers (QBs). Methods: The numerically calculated ENF values of MQB APDs have been compared with the ENF of Si flat conventional APDs of similar dimensions and it is observed that the use of QBs leads to significant reduction in ENF of the APDs under similar biasing and illumination conditions. Results: The enhanced ratio of hole to electron ionization rates in MQB structures as compared to the bulk Si APD structure has been found to be the primary cause of improvement in the noise performance of the MQB nano-APDs. Conclusion: Finally, the numerically calculated ENF of Si flat APD has been compared with the experimentally measured ENF of a commercially available Si APD and those are found to be in good agreement; this comparison validates the simulation methodology adopted by the authors in this paper.

Monte Carlo simulation of avalanche noise characteristics of type II InAs/GaSb superlattice avalanche photodiodes

2019 ◽  
Vol 301 ◽  
pp. 113699
Author(s):  
Chengcheng Zhao ◽  
Jianliang Huang ◽  
Yanhua Zhang ◽  
Wenjun Huang ◽  
Biyin Nie ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Avalanche Photodiodes ◽  
Type Ii ◽  
Noise Characteristics
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