The MOS controlled super junction transistor (SJBT): a new, highly efficient, high power semiconductor device for medium to high voltage applications

2003 ◽  
Author(s):  
F. Bauer
Keyword(s):  
High Voltage ◽  
High Power ◽  
Semiconductor Device ◽  
Power Semiconductor Device ◽  
Power Semiconductor ◽  
Highly Efficient ◽  
Junction Transistor

A Study on the Electric Characteristics of the Trench Gate Field Stop Insulated Gate Bipolar Transistor Through Two-Step Field Stop

2021 ◽  
Vol 16 (5) ◽  
pp. 762-765
Author(s):  
Hae Seock Lee ◽  
Geon Hee Lee ◽  
Byoung Sup Ahn ◽  
Ey Goo Kang
Keyword(s):  
Breakdown Voltage ◽  
Semiconductor Device ◽  
Voltage Drop ◽  
Bipolar Transistor ◽  
Power Semiconductor ◽  
Insulated Gate Bipolar Transistor ◽  
Voltage Loss ◽  
One Step ◽  
Junction Transistor ◽  
Off Time

Insulated gate bipolar transistor (IGBT) element is an electrically conductive device with Bipolar junction transistor (BJT) output and Metal Oxide Silicon Field Effect Transistor (MOSFET) input. The IGBTs is a power semiconductor device that aims for high breakdown voltage, low on-state voltage, fast switching and reliability. This paper is, the experiment was conducted with a two-step field stop, IGBT instead of a traditional one step field stop. In order to minimize the energy loss caused by the trade-off relationship between breakdown voltage and the on-state voltage drop, the experiment was conducted by forming a two-step field stop. Through concentration control between steps, breakdown voltage, On-state Voltage drop and turn off time could be adjusted in detail, and efficient characteristic values could be obtained accordingly. Experiments have confirmed that the On state voltage drop and turn-off time, in particular, can be adjusted by small failure voltage loss upon change in the first stage field stop.

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