scholarly journals Thermal design of high power semiconductor packages for aircraft electronic systems

1999 ◽  
Author(s):  
F. Sarvar
Keyword(s):  
High Power ◽  
Thermal Design ◽  
Electronic Systems ◽  
Power Semiconductor ◽  
Semiconductor Packages

Electro-Thermal Design of Smart Power Devices and Integrated Circuits

2014 ◽  
Vol 918 ◽  
pp. 191-194 ◽  
Author(s):  
Konstantin O. Petrosyants ◽  
Igor A. Kharitonov ◽  
Nikita I. Ryabov
Keyword(s):  
Integrated Circuits ◽  
High Power ◽  
Temperature Sensors ◽  
Thermal Design ◽  
Analysis Tool ◽  
Power Devices ◽  
Smart Power ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Combined Use

An efficient methodology of electro-thermal design of smart power semiconductor devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for 2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and high power elements, temperature sensors, IC chips simulation are considered.

scholarly journals IGBT Package Design for High Power Aircraft Electronic Systems

2001 ◽  
Vol 123 (4) ◽  
pp. 338-343 ◽  
Author(s):  
Farhad Sarvar ◽  
David C. Whalley ◽  
Ming K. Low
Keyword(s):  
High Power ◽  
Semiconductor Device ◽  
Analytical Models ◽  
Electronic Systems ◽  
3D Analysis ◽  
Package Design ◽  
Evaluation Of Performance ◽  
Wide Range ◽  
Semiconductor Packages ◽  
Design Options

This paper will discuss the design of semiconductor packages having integrated air cooled heatsinks for use in high power electronic systems. It will demonstrate how simple models of the heat transfer from the heatsink fins, which are based on empirical correlations, may be utilized in combination with either simple analytical models or two-dimensional finite difference (FD) models of the heat conduction from the semiconductor die through the multilayer package structure to the base of the fins. These models allow the rapid evaluation of performance under both steady-state and transient overload conditions, and can be used to rapidly explore a wide range of design options before selecting candidate layouts for more detailed evaluation using 3D analysis tools. Wind tunnel experiments, which will also be reported, have been carried out to verify the modeling results for different semiconductor device layouts. These trials demonstrate excellent agreement between the models and experimental results.

Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

2020 ◽  
Vol 41 (9) ◽  
pp. 1158-1164
Author(s):  
Bo LI ◽  
◽  
Zhen-fu WANG ◽  
Bo-cang QIU ◽  
Guo-wen YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
Semiconductor Laser ◽  
High Power ◽  
Temperature Characteristic ◽  
Laser Array ◽  
Power Semiconductor
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