A visible large area light emitting diode fabricated from porous silicon using a conducting polyaniline contact

1995 ◽  
Author(s):  
D.P. Halliday
Keyword(s):  
Porous Silicon ◽  
Light Emitting Diode ◽  
Large Area ◽  
Light Emitting ◽  
Conducting Polyaniline

scholarly journals A 3 W High-Voltage Single-Chip Green Light-Emitting Diode with Multiple-Cells Network

2015 ◽  
Vol 2015 ◽  
pp. 1-4 ◽  
Author(s):  
W. Wang ◽  
Y. Cai ◽  
Y. B. Zhang ◽  
H. J. Huang ◽  
W. Huang ◽  
...  
Keyword(s):  
High Voltage ◽  
Light Emitting Diode ◽  
Light Output ◽  
Green Light ◽  
Current Crowding ◽  
Single Chip ◽  
Light Output Power ◽  
Large Area ◽  
Light Emitting ◽  
Multiple Cells

A parallel and series network structure was introduced into the design of the high-voltage single-chip (HV-SC) light-emitting diode to inhibit the effect of current crowding and to improve the yield. Using such a design, a6.6×5 mm2large area LED chip of 24 parallel stages was demonstrated with 3 W light output power (LOP) at the current of 500 mA. The forward voltage was measured to be 83 V with the same current injection, corresponding to 3.5 V for a single stage. The LED chip’s average thermal resistance was identified to be 0.28 K/W by using infrared thermography analysis.

scholarly journals 3D Microlithography Using an Integrated System of 5-mm UV-LEDs with a Tilt-Rotational Sample Holder

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 157 ◽  
Author(s):  
Sabera Fahmida Shiba ◽  
Hyeongmin Jeon ◽  
Jong-Soo Kim ◽  
Jong-Eun Kim ◽  
Jungkwun Kim
Keyword(s):  
Light Source ◽  
Light Emitting Diode ◽  
Vertical Direction ◽  
Ultra Violet ◽  
Integrated System ◽  
Sample Holder ◽  
Large Area ◽  
Light Emitting ◽  
Uv Led ◽  
Uv Leds

This paper demonstrates a 3D microlithography system where an array of 5 mm Ultra Violet-Light Emitting Diode (UV-LED) acts as a light source. The unit of the light source is a UV-LED, which comes with a length of about 8.9 mm and a diameter of 5 mm. The whole light source comprises 20 × 20 matrix of such 5 mm UV-LEDs giving a total number of 400 LEDs which makes it a very favorable source with a large area for having a batch production of the desired microstructures. This light source is able to give a level of precision in microfabrication which cannot be obtained using commercial 3D printers. The whole light source performs continuous rotational movement once it is turned on. This can also move up and down in a vertical direction. This multidirectional light source also comprises a multidirectional sample holder. The light source teaming up with the multidirectional sample holder highly facilitates the process of fabrication of a huge range of 3D structures. This article also describes the different levels of characterization of the system and demonstrates several fabricated 3D microstructures including high aspect ratio vertical micro towers, twisted turbine structures, triangles, inclined pillar ‘V’ structures, and hollow horn structures as well.

Large-Area Tunable Red/Green/Blue Tri-Stacked Quantum Dot Light-Emitting Diode Using Sandwich-Structured Transparent Silver Nanowires Electrodes

2020 ◽  
Vol 12 (43) ◽  
pp. 48820-48827
Author(s):  
Jia Sun ◽  
Hongqin Wang ◽  
Hengzhou Shi ◽  
Siyuan Wang ◽  
Jinping Xu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Silver Nanowires ◽  
Light Emitting Diode ◽  
Large Area ◽  
Light Emitting

Effect of Electrolyte Volume Ratio on Electroluminescence of Porous Silicon Nanostructures (PSiNs) Intensity

2013 ◽  
Vol 686 ◽  
pp. 49-55
Author(s):  
M. Ain Zubaidah ◽  
N.A. Asli ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Volume Ratio ◽  
Visible Range ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Light Emitting ◽  
Flat Screen ◽  
P Type

For this experiment, the main purpose of this experiment is to determine the electroluminescence of PSiNs samples with optimum electrolyte volume ratio of photo-electrochemical anodisation. PSiNs samples were prepared by photo-electrochemical anodisation by using p-type silicon substrate. For the formation of PSiNs on the silicon surface, a fixed current density (J=20 mA/cm2) and 30 minutes etching time were applied for the various electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH was used for sample A (3:1), sample B (2:1), sample C (1:1), sample D (1:2) and sample E (1:3). The light emission can be observed at visible range. The effective electroluminescence was observed for sample C. Porous silicon nanostructures light–emitting diode (PSiNs-LED) has high-potential device for future flat screen display and can be high in demand.

Light Emitting Diode with Porous Silicon/Conducting Polymer Heterojunction

1997 ◽  
Vol 36 (Part 2, No. 4A) ◽  
pp. L418-L420 ◽  
Author(s):  
Kazuya Tada ◽  
Maki Hamaguchi ◽  
Akihiko Hosono ◽  
Shinsuke Yura ◽  
Hiroshi Harada ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Conducting Polymer ◽  
Light Emitting Diode ◽  
Light Emitting

White Light from an Indium Zinc Oxide/Porous Silicon Light-Emitting Diode

2008 ◽  
Vol 113 (2) ◽  
pp. 751-754 ◽  
Author(s):  
Guangxia Hu ◽  
Shi Qiang Li ◽  
Hao Gong ◽  
Yanlin Zhao ◽  
Jixuan Zhang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Porous Silicon ◽  
White Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Indium Zinc Oxide

Large-Area Quantum-Dot Light Emitting Diode Arrays with ZnO Nanoparticles as Electron Transport/Injection Layer

2014 ◽  
Vol 6 (12) ◽  
pp. 2625-2631 ◽  
Author(s):  
Khan Qasim ◽  
Jing Chen ◽  
Feng Xu ◽  
Jun Wu ◽  
Zhi Li ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Zno Nanoparticles ◽  
Light Emitting Diode ◽  
Large Area ◽  
Light Emitting

Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technology

2010 ◽  
Vol 25 (3) ◽  
pp. 035008 ◽  
Author(s):  
Kyeong-Jae Byeon ◽  
Eun-Ju Hong ◽  
Hyoungwon Park ◽  
Kyung-Min Yoon ◽  
Hyun Don Song ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Large Area ◽  
Light Emitting
Sign in / Sign up

Export Citation Format

Share Document