White Light from an Indium Zinc Oxide/Porous Silicon Light-Emitting Diode

2008 ◽  
Vol 113 (2) ◽  
pp. 751-754 ◽  
Author(s):  
Guangxia Hu ◽  
Shi Qiang Li ◽  
Hao Gong ◽  
Yanlin Zhao ◽  
Jixuan Zhang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Porous Silicon ◽  
White Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Indium Zinc Oxide

Characteristics of Amorphous Indium Zinc Oxide Anode Films on Polycarbonate Substrate for Flexible Organic Light Emitting Diode

2007 ◽  
Vol 124-126 ◽  
pp. 399-402 ◽  
Author(s):  
Han Ki Kim ◽  
Jung Hyeok Bae ◽  
Jong Min Moon ◽  
Sang Woo Kim ◽  
Soon Wook Jeong ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Indium Zinc Oxide ◽  
Organic Light ◽  
Ito Glass ◽  
Anode Film ◽  
Anode Films

Electrical, optical, and structural properties of amorphous indium zinc oxide (IZO) anode films grown on flexible polycarbonate (PC) substrate were investigated. The x-ray diffraction (XRD) result shows that the IZO film grown at room temperature is complete amorphous structure due to low substrate temperature. A sheet resistance of 34.1 ,/, average transmittance above 88.9% in visible range, and root mean spare roughness of 3.5~10.5 Å were obtained even in the amorphous IZO anode film grown on PC substrate at room temperature. It is shown that the Ir(ppy)3 doped-flexible organic light emitting diode (OLED) fabricated on the amorphous IZO anode exhibit comparable current-voltage-luminance characteristics as well as external quantum efficiency and power efficiency to OLED fabricated on conventional ITO/glass substrate. These findings indicate that the IZO anode film is a promising anode material for the fabrication of flexible OLEDs.

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