Enhancement in external quantum efficiency of blue light-emitting diode by photonic crystal surface grating

2005 ◽  
Vol 41 (20) ◽  
pp. 1138 ◽  
Author(s):  
T. Kim ◽  
A.J. Danner ◽  
K.D. Choquette
Keyword(s):  
Photonic Crystal ◽  
Blue Light ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Crystal Surface ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Surface Grating

Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons

2008 ◽  
Vol 20 (16) ◽  
pp. 3100-3104 ◽  
Author(s):  
Beak-Hyun Kim ◽  
Chang-Hee Cho ◽  
Jin-Soo Mun ◽  
Min-Ki Kwon ◽  
Tae-Young Park ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Surface Plasmons ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Localized Surface Plasmons ◽  
Light Emitting ◽  
Silicon Quantum Dot

N-face GaN substrate roughening for improved performance GaN-on-GaN LED

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Ezzah Azimah Alias ◽  
Muhammad Esmed Alif Samsudin ◽  
Steven DenBaars ◽  
James Speck ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Optical Power ◽  
Ammonium Hydroxide ◽  
Content Type ◽  
Light Emitting ◽  
Gan Led ◽  
Improved Performance ◽  
Substrate Roughening

Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etching, which was 5 × 109 cm–2. The density by KOH and NH4OH etchings was 3.6 × 109 and 5 × 108 cm–2, respectively. At standard operation of current density at 20 A/cm2, the optical power and external quantum efficiency of the LED on the roughened GaN substrate by NH4OH: H2O2 were 12.3 mW and 22%, respectively, which are higher than its counterparts. Originality/value This study demonstrated NH4OH: H2O2 is a new etchant for roughening the N-face GaN substrate. The results showed that such etchant increased the density of the pyramids on the N-face GaN substrate, which subsequently resulted in higher optical power and external quantum efficiency to the LED as compared to KOH and NH4OH.

Enhanced Light Extraction of GaN Based Blue Light-Emitting Diode with SiO2/ITO Photonic Crystal Structure

2012 ◽  
Vol 2 (1) ◽  
pp. P13-P15 ◽  
Author(s):  
Min-Ki Kwon ◽  
Ja-Yeon Kim ◽  
Ki Seok Kim ◽  
Gun-Young Jung ◽  
Wantea Lim ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Photonic Crystal ◽  
Blue Light ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Photonic Crystal Structure ◽  
Light Emitting

Single-layer organic light-emitting diode with 2.0% external quantum efficiency prepared by spin-coating

2000 ◽  
Vol 320 (5-6) ◽  
pp. 387-392 ◽  
Author(s):  
Y.D. Jin ◽  
J.P. Yang ◽  
P.L. Heremans ◽  
M. Van der Auweraer ◽  
E. Rousseau ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Spin Coating ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Single Layer ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light
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