Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons

2008 ◽  
Vol 20 (16) ◽  
pp. 3100-3104 ◽  
Author(s):  
Beak-Hyun Kim ◽  
Chang-Hee Cho ◽  
Jin-Soo Mun ◽  
Min-Ki Kwon ◽  
Tae-Young Park ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Surface Plasmons ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Localized Surface Plasmons ◽  
Light Emitting ◽  
Silicon Quantum Dot

Fully Solution-Processed Tandem White Quantum-Dot Light-Emitting Diode with an External Quantum Efficiency Exceeding 25%

ACS Nano ◽  
2018 ◽  
Vol 12 (6) ◽  
pp. 6040-6049 ◽  
Author(s):  
Congbiao Jiang ◽  
Jianhua Zou ◽  
Yu Liu ◽  
Chen Song ◽  
Zhiwei He ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Solution Processed ◽  
Light Emitting

High-efficiency, deep blue ZnCdS/CdxZn1−xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18%

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5650-5657 ◽  
Author(s):  
Ouyang Wang ◽  
Lei Wang ◽  
Zhaohan Li ◽  
Qiulei Xu ◽  
Qingli Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Deep Blue

18% peak external quantum efficiency (EQE) for deep blue QLEDs by using ZnCdS/CdxZn1−xS/ZnS quantum dots.

N-face GaN substrate roughening for improved performance GaN-on-GaN LED

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Ezzah Azimah Alias ◽  
Muhammad Esmed Alif Samsudin ◽  
Steven DenBaars ◽  
James Speck ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Optical Power ◽  
Ammonium Hydroxide ◽  
Content Type ◽  
Light Emitting ◽  
Gan Led ◽  
Improved Performance ◽  
Substrate Roughening

Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etching, which was 5 × 109 cm–2. The density by KOH and NH4OH etchings was 3.6 × 109 and 5 × 108 cm–2, respectively. At standard operation of current density at 20 A/cm2, the optical power and external quantum efficiency of the LED on the roughened GaN substrate by NH4OH: H2O2 were 12.3 mW and 22%, respectively, which are higher than its counterparts. Originality/value This study demonstrated NH4OH: H2O2 is a new etchant for roughening the N-face GaN substrate. The results showed that such etchant increased the density of the pyramids on the N-face GaN substrate, which subsequently resulted in higher optical power and external quantum efficiency to the LED as compared to KOH and NH4OH.

scholarly journals Silicon Quantum Dot Light Emitting Diode at 620 nm

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 318 ◽  
Author(s):  
Hiroyuki Yamada ◽  
Naoto Shirahata
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diode ◽  
Optically Active ◽  
Driving Voltage ◽  
Device Structure ◽  
Light Emitting ◽  
Naked Eye ◽  
Turn On ◽  
Silicon Quantum Dot

Here we report a quantum dot light emitting diode (QLED), in which a layer of colloidal silicon quantum dots (SiQDs) works as the optically active component, exhibiting a strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation of the EL spectral peak, even in air, when the operation voltage varied in the range from 4 to 5 V because of the possible advantage of the inverted device structure. The pale-orange EL spectrum was as narrow as 95 nm. Interestingly, the EL spectrum was narrower than the corresponding photoluminescence (PL) spectrum. The EL emission was strong enough to be seen by the naked eye. The currently obtained brightness (∼4200 cd/m2), the 0.033% external quantum efficiency (EQE), and a turn-on voltage as low as 2.8 V show a sufficiently high performance when compared to other orange-light-emitting Si-QLEDs in the literature. We also observed a parasitic emission from the neighboring compositional layer (i.e., the zinc oxide layer), and its intensity increased with the driving voltage of the device.

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