Impact of grain growth of silver reflective electrode by electron bombardment on external quantum efficiency of III-nitride micro-light-emitting diode arrays

2020 ◽  
Vol 512 ◽  
pp. 145698 ◽  
Author(s):  
In Yeol Hong ◽  
Abu Bashar Mohammad Hamidul Islam ◽  
Tae Kyoung Kim ◽  
Yu-Jung Cha ◽  
Joon Seop Kwak
Keyword(s):  
Grain Growth ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Electron Bombardment ◽  
Light Emitting

Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons

2008 ◽  
Vol 20 (16) ◽  
pp. 3100-3104 ◽  
Author(s):  
Beak-Hyun Kim ◽  
Chang-Hee Cho ◽  
Jin-Soo Mun ◽  
Min-Ki Kwon ◽  
Tae-Young Park ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Surface Plasmons ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Localized Surface Plasmons ◽  
Light Emitting ◽  
Silicon Quantum Dot

N-face GaN substrate roughening for improved performance GaN-on-GaN LED

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Ezzah Azimah Alias ◽  
Muhammad Esmed Alif Samsudin ◽  
Steven DenBaars ◽  
James Speck ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Optical Power ◽  
Ammonium Hydroxide ◽  
Content Type ◽  
Light Emitting ◽  
Gan Led ◽  
Improved Performance ◽  
Substrate Roughening

Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etching, which was 5 × 109 cm–2. The density by KOH and NH4OH etchings was 3.6 × 109 and 5 × 108 cm–2, respectively. At standard operation of current density at 20 A/cm2, the optical power and external quantum efficiency of the LED on the roughened GaN substrate by NH4OH: H2O2 were 12.3 mW and 22%, respectively, which are higher than its counterparts. Originality/value This study demonstrated NH4OH: H2O2 is a new etchant for roughening the N-face GaN substrate. The results showed that such etchant increased the density of the pyramids on the N-face GaN substrate, which subsequently resulted in higher optical power and external quantum efficiency to the LED as compared to KOH and NH4OH.

Single-layer organic light-emitting diode with 2.0% external quantum efficiency prepared by spin-coating

2000 ◽  
Vol 320 (5-6) ◽  
pp. 387-392 ◽  
Author(s):  
Y.D. Jin ◽  
J.P. Yang ◽  
P.L. Heremans ◽  
M. Van der Auweraer ◽  
E. Rousseau ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Spin Coating ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Single Layer ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light

Highly simplified phosphorescent organic light emitting diode with >20% external quantum efficiency at >10,000 cd/m2

2011 ◽  
Vol 98 (7) ◽  
pp. 073310 ◽  
Author(s):  
Z. B. Wang ◽  
M. G. Helander ◽  
J. Qiu ◽  
D. P. Puzzo ◽  
M. T. Greiner ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light

A Fluorescent Organic Light-Emitting Diode with 30% External Quantum Efficiency

2014 ◽  
Vol 26 (32) ◽  
pp. 5684-5688 ◽  
Author(s):  
Jin Won Sun ◽  
Jeong-Hwan Lee ◽  
Chang-Ki Moon ◽  
Kwon-Hyeon Kim ◽  
Hyun Shin ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light

scholarly journals Light-Emitting Diodes: A Fluorescent Organic Light-Emitting Diode with 30% External Quantum Efficiency (Adv. Mater. 32/2014)

2014 ◽  
Vol 26 (32) ◽  
pp. 5577-5577 ◽  
Author(s):  
Jin Won Sun ◽  
Jeong-Hwan Lee ◽  
Chang-Ki Moon ◽  
Kwon-Hyeon Kim ◽  
Hyun Shin ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light

Internal Mechanical Stresses and Conductivity Mechanisms of p-n-InAsPSb/InAs-Heterostructures

1997 ◽  
Vol 505 ◽  
Author(s):  
V. G. Sidorov ◽  
V. I. Sokolov ◽  
D. V. Sidorov
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Lattice Mismatch ◽  
Light Emitting Diode ◽  
Mechanical Stresses ◽  
Power Dependence ◽  
Tunnel Current ◽  
Light Emitting ◽  
Double Heterostructures

ABSTRACTInfluence of internal mechanical stresses (IMS) and dislocations on conductivity mechanisms and reliability of light emitting diode (LED) and laser InAsPSb/InAs double heterostructures has been investigated. It was shown that the presence of lattice mismatch of layers at p-n-heteroboundaries changes LED conductivity mechanisms the same way as longterm working challenges by current. It was determined that LED degradation has barrier character and is followed by appearance and growth of tunnel current components with power dependence of current from voltage. Reliability and external quantum efficiency decrease with growth of lattice mismatch.

A hybrid white organic light-emitting diode with above 20% external quantum efficiency and extremely low efficiency roll-off

2014 ◽  
Vol 2 (36) ◽  
pp. 7494-7504 ◽  
Author(s):  
Ning Sun ◽  
Qi Wang ◽  
Yongbiao Zhao ◽  
Dezhi Yang ◽  
Fangchao Zhao ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Structure Design ◽  
Device Structure ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Low Efficiency

Based on a delicate device structure design, a novel (phosphorescence/fluorescence) hybrid WOLED with nearly 100% exciton harvesting has been demonstrated.

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