Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN∕substrate interface

2004 ◽  
Vol 40 (1) ◽  
pp. 81 ◽  
Author(s):  
V.O. Turin ◽  
A.A. Balandin
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Performance Degradation ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Substrate Interface

Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs

2003 ◽  
Vol 764 ◽  
Author(s):  
Konstantin A. Filippov ◽  
Alexander A. Balandin
Keyword(s):  
Temperature Rise ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Boundary Resistance ◽  
Heat Diffusion ◽  
Thermal Boundary Resistance ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

AbstractWe theoretically investigate the thermal boundary resistance and heat diffusion in AlGaN/GaN heterostructure field-effect transistors. Our calculations based on the diffuse mismatch model show that the thermal boundary resistance at the interface between GaN and SiC can strongly influence the temperature rise in the device channel.

scholarly journals The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

2003 ◽  
Vol 8 ◽  
Author(s):  
K.A. Filippov ◽  
A.A. Balandin
Keyword(s):  
Temperature Rise ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Boundary Resistance ◽  
Heat Diffusion ◽  
Thermal Boundary Resistance ◽  
Device Layer ◽  
Self Heating ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure field-effect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel.

Thermal Boundary Resistance at YBaCuO Film-Substrate Interface

1993 ◽  
pp. 405-406
Author(s):  
A. V. Sergeev ◽  
E. E. Aksaev ◽  
I. G. Gogidze ◽  
G. N. Gol’tsman ◽  
A. D. Semenov ◽  
...  
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Substrate Interface ◽  
Film Substrate

On the Performance Degradation of Poly(3-Hexylthiophene) Field-Effect Transistors

2015 ◽  
Vol 15 (3) ◽  
pp. 342-351 ◽  
Author(s):  
Marco R. Cavallari ◽  
Vinicius R. Zanchin ◽  
Marcio A. Valle ◽  
Jose E. E. Izquierdo ◽  
Eduardo M. Rodriguez ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Performance Degradation

Thermal boundary resistance of a granular film-substrate interface

2006 ◽  
Vol 32 (10) ◽  
pp. 904-907 ◽  
Author(s):  
Yu. M. Nikolaenko ◽  
Yu. V. Medvedev ◽  
M. Ghafari ◽  
H. Hahn ◽  
I. N. Chukanova
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Granular Film ◽  
Substrate Interface ◽  
Film Substrate

scholarly journals Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors

2014 ◽  
Vol 104 (20) ◽  
pp. 203506 ◽  
Author(s):  
Matin Amani ◽  
Matthew L. Chin ◽  
Alexander L. Mazzoni ◽  
Robert A. Burke ◽  
Sina Najmaei ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Performance Degradation ◽  
Growth Substrate ◽  
Monolayer Mos2

Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods

2007 ◽  
Vol 101 (5) ◽  
pp. 054508 ◽  
Author(s):  
J. Kuzmík ◽  
S. Bychikhin ◽  
D. Pogany ◽  
C. Gaquière ◽  
E. Pichonat ◽  
...  
Keyword(s):  
Boundary Resistance ◽  
Optical Methods ◽  
Thermal Boundary Resistance ◽  
Substrate Interface
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