Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods

2007 ◽  
Vol 101 (5) ◽  
pp. 054508 ◽  
Author(s):  
J. Kuzmík ◽  
S. Bychikhin ◽  
D. Pogany ◽  
C. Gaquière ◽  
E. Pichonat ◽  
...  
Keyword(s):  
Boundary Resistance ◽  
Optical Methods ◽  
Thermal Boundary Resistance ◽  
Substrate Interface

Thermal Boundary Resistance at YBaCuO Film-Substrate Interface

1993 ◽  
pp. 405-406
Author(s):  
A. V. Sergeev ◽  
E. E. Aksaev ◽  
I. G. Gogidze ◽  
G. N. Gol’tsman ◽  
A. D. Semenov ◽  
...  
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Substrate Interface ◽  
Film Substrate

Thermal boundary resistance of a granular film-substrate interface

2006 ◽  
Vol 32 (10) ◽  
pp. 904-907 ◽  
Author(s):  
Yu. M. Nikolaenko ◽  
Yu. V. Medvedev ◽  
M. Ghafari ◽  
H. Hahn ◽  
I. N. Chukanova
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Granular Film ◽  
Substrate Interface ◽  
Film Substrate

The Impact of Interfacial Layers on the Thermal Boundary Resistance and Residual Stress in GaN on Si Epitaxial Layers

2015 ◽  
Author(s):  
Luke Yates ◽  
Thomas L. Bougher ◽  
Thomas Beechem ◽  
Baratunde A. Cola ◽  
Samuel Graham
Keyword(s):  
Residual Stress ◽  
Power Electronics ◽  
Boundary Resistance ◽  
Optical Methods ◽  
Thermal Boundary Resistance ◽  
Epitaxial Layers ◽  
High Electron ◽  
Interfacial Layers ◽  
Gan On Si ◽  
The Impact

The development of gallium nitride (GaN) on silicon (Si) substrates is a critical technology for potential low cost power electronics. These devices can accommodate faster switching speeds, hotter temperatures, and high voltages needed for power electronics applications. However, the lattice mismatch and difference in crystal structure between 111 Si and c-axis hexagonal GaN requires the use of buffer layers in order to grow device quality epitaxial layers. For lateral high electron mobility transistors, these interfacial layers act as a potential source of increased thermal boundary resistance (TBR) which impedes heat flow out of the GaN on Si devices. In addition, these interfacial layers impact the growth and residual stress in the GaN epitaxial layer which can play a role in device reliability. In this work we use optical methods to experimentally measure a relatively low TBR for GaN on Si with an intermediate buffer layer to be 3.8 ± 0.4 m2K/GW. The effective TBR of a material stack that encompasses GaN on Si with a superlattice (SL) buffer is also measured, and is found to be 107 ± 1 m2K/GW. In addition the residual state of strain in the GaN layer is measured for both samples, and is found to vary significantly between them. Thermal conductivity of a 0.8μm GaN layer on AlN buffer is determined to be 126 ± 25 W/m-K, while a 0.84 μm GaN layer with C-doping on a SL structure is determined to be 112 ± 29 W/m-K.

INTERLAYER THERMAL BOUNDARY RESISTANCE OF WSe2 INVESTIGATED BY USING TIME-DOMAIN THERMOREFLECTANCE MEASUREMENT

2018 ◽  
Author(s):  
Young Gwan Choi ◽  
Chan June Zhung ◽  
Chang Jae Roh ◽  
Hwi In Ju ◽  
Tae Yun Kim ◽  
...  
Keyword(s):  
Time Domain ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance

The Role of Interface Vibrational Modes in Thermal Boundary Resistance

2021 ◽  
Author(s):  
Christopher M. Stanley ◽  
Benjamin K. Rader ◽  
Braxton H. D. Laster ◽  
Mahsa Servati ◽  
Stefan K. Estreicher
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Vibrational Modes

Enhanced performance thermal diode via thermal boundary resistance at nanoscale

2015 ◽  
Vol 107 (8) ◽  
pp. 084103 ◽  
Author(s):  
M. Tovar-Padilla ◽  
L. Licea-Jimenez ◽  
S. A. Pérez-Garcia ◽  
J. Alvarez-Quintana
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance

The Role of Interface Vibrational Modes in Thermal Boundary Resistance

2021 ◽  
Vol 218 (23) ◽  
pp. 2170063
Author(s):  
Christopher M. Stanley ◽  
Benjamin K. Rader ◽  
Braxton H. D. Laster ◽  
Mahsa Servati ◽  
Stefan K. Estreicher
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Vibrational Modes
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