12 W∕mm power density AlGaN∕GaN HEMTs on sapphire substrate

2004 ◽  
Vol 40 (1) ◽  
pp. 73 ◽  
Author(s):  
A. Chini ◽  
D. Buttari ◽  
R. Coffie ◽  
S. Heikman ◽  
S. Keller ◽  
...  
Keyword(s):  
Power Density ◽  
Sapphire Substrate ◽  
Gan Hemts

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

2011 ◽  
Vol 32 (11) ◽  
pp. 1537-1539 ◽  
Author(s):  
F. Lecourt ◽  
N. Ketteniss ◽  
H. Behmenburg ◽  
N. Defrance ◽  
V. Hoel ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Sapphire Substrate ◽  
Gan Hemts

A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

2011 ◽  
Vol 32 (12) ◽  
pp. 124003 ◽  
Author(s):  
Bo Liu ◽  
Zhihong Feng ◽  
Sen Zhang ◽  
Shaobo Dun ◽  
Jiayun Yin ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Sapphire Substrate ◽  
Gan Hemt

Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate

2003 ◽  
Vol 47 (11) ◽  
pp. 2081-2084 ◽  
Author(s):  
Jaesun Lee ◽  
Dongmin Liu ◽  
Zhaojun Lin ◽  
Wu Lu ◽  
Jeffrey S. Flynn ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Enhancement Mode ◽  
Gan Hemts

Electrical characteristics of post-gate-annealed AlGaN/GaN HEMTs on sapphire substrate

2014 ◽  
Author(s):  
Somna S Mahajan ◽  
Anushree Tomer ◽  
Amit Malik ◽  
Robert Laishram ◽  
Vanita R Agarwal ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Electrical Characteristics ◽  
Gan Hemts

N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate

2011 ◽  
Vol 32 (5) ◽  
pp. 635-637 ◽  
Author(s):  
Seshadri Kolluri ◽  
Stacia Keller ◽  
Steven P. DenBaars ◽  
Umesh K. Mishra
Keyword(s):  
Power Density ◽  
Output Power ◽  
Sapphire Substrate ◽  
Continuous Wave ◽  
Continuous Wave Output Power

MBE growth of AlGaN∕GaN HEMTs with high power density

2002 ◽  
Vol 38 (25) ◽  
pp. 1740 ◽  
Author(s):  
D.S. Katzer ◽  
S.C. Binari ◽  
D.F. Storm ◽  
J.A. Roussos ◽  
B.V. Shanabrook ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Power Density ◽  
Mbe Growth ◽  
Gan Hemts

scholarly journals Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 76
Author(s):  
Huaixin Guo ◽  
Tangsheng Chen ◽  
Shang Shi
Keyword(s):  
Power Density ◽  
Power Amplifiers ◽  
Pulse Width ◽  
Thermal Response ◽  
Thermal Design ◽  
Transient Simulation ◽  
Gate Width ◽  
Channel Temperature ◽  
Gan Hemts ◽  
Transient Thermal

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs.

InAlN/AlN/GaN HEMTs on sapphire substrate

2010 ◽  
Author(s):  
H. Q. Liu ◽  
J. J. Zhou ◽  
X. Dong ◽  
T. S. Chen ◽  
C. Chen
Keyword(s):  
Sapphire Substrate ◽  
Gan Hemts

Field-plated 0.25 [micro sign]m gate-length AlGaN∕GaN HEMTs on 6H-SiC with power density of 9.1 W∕mm at 18 GHz

2005 ◽  
Vol 41 (19) ◽  
pp. 1080 ◽  
Author(s):  
V. Kumar ◽  
G. Chen ◽  
S. Guo ◽  
B. Peres ◽  
I. Eliasevich ◽  
...  
Keyword(s):  
Power Density ◽  
Gate Length ◽  
Gan Hemts
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