InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz
2011 ◽
Vol 32
(11)
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pp. 1537-1539
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2011 ◽
Vol 32
(12)
◽
pp. 124003
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2011 ◽
Vol 32
(5)
◽
pp. 635-637
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Keyword(s):
2014 ◽
Vol 35
(10)
◽
pp. 995-997
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