100 GHz dynamic frequency divider in SiGe bipolar technology

2003 ◽  
Vol 39 (2) ◽  
pp. 217 ◽  
Author(s):  
A. Rylyakov ◽  
L. Klapproth ◽  
B. Jagannathan ◽  
G. Freeman
Keyword(s):  
Frequency Divider ◽  
Bipolar Technology ◽  
Dynamic Frequency

168 GHz dynamic frequency divider in SiGe:C bipolar technology

2009 ◽  
Author(s):  
Herbert Knapp ◽  
Thomas F. Meister ◽  
Wolfgang Liebl ◽  
Klaus Aufinger ◽  
Herbert Schafer ◽  
...  
Keyword(s):  
Frequency Divider ◽  
Bipolar Technology ◽  
Dynamic Frequency

Self-aligned metal/IDP Si bipolar technology with 12-ps ECL and 45-GHz dynamic frequency divider

1997 ◽  
Vol 44 (11) ◽  
pp. 2078-2082 ◽  
Author(s):  
K. Washio ◽  
E. Ohue ◽  
M. Tanabe ◽  
T. Onai
Keyword(s):  
Frequency Divider ◽  
Bipolar Technology ◽  
Dynamic Frequency

HIGH-PERFORMANCE Si and SiGe BIPOLAR TECHNOLOGIES AND CIRCUITS

2001 ◽  
Vol 11 (01) ◽  
pp. 35-76 ◽  
Author(s):  
MARTIN WURZER ◽  
THOMAS F. MEISTER ◽  
JOSEF BÖCK ◽  
HERBERT SCHÄFER ◽  
KLAUS AUFINGER ◽  
...  
Keyword(s):  
Low Power ◽  
Communication Systems ◽  
High Speed ◽  
High Performance ◽  
Frequency Divider ◽  
Pure Silicon ◽  
Bipolar Technology ◽  
Silicon Bipolar Technology ◽  
Oscillation Frequencies ◽  
Dynamic Frequency

In this paper we present Si and SiGe bipolar technologies and circuits suited for present and future high-performance communication systems. The silicon bipolar technology described has an implanted base and, without increase in process complexity in comparison to current production technologies, transit frequencies of 52 GHz and maximum oscillation frequencies of 65 GHz are achieved. The transistors of the described epitaxial SiGe-base technologies exhibit transit frequencies of 81 GHz and maximum oscillation frequencies of 95 GHz. Measurement results of circuits realized in these technologies for low power and high-speed applications are presented: a 43 GHz low power dynamic frequency divider, a 23 GHz monolithically integrated oscillator, a 40 Gb/s clock and data (CDR) recovery realized in the pure silicon bipolar technology, and a 53 GHz static frequency divider, a 79 GHz dynamic frequency divider and a 20 GHz/27 mW dual-modulus prescaler in the SiGe technology.

A 9-81/38-189 GHz Dual-Band Switchable Dynamic Frequency Divider

2015 ◽  
Author(s):  
Jidan Al-Eryani ◽  
Herbert Knapp ◽  
Hao Li ◽  
Klaus Aufinger ◽  
Jonas Wursthorn ◽  
...  
Keyword(s):  
Frequency Divider ◽  
Dual Band ◽  
Dynamic Frequency

3.93-MHz/328-μW Dynamic Frequency Divider in Flexible a-IGZO TFT Technology

2020 ◽  
Vol 3 ◽  
pp. 134-137
Author(s):  
Tilo Meister ◽  
Koichi Ishida ◽  
Antony Sou ◽  
Corrado Carta ◽  
Frank Ellinger
Keyword(s):  
Frequency Divider ◽  
Dynamic Frequency ◽  
Igzo Tft

20 GHz dynamic frequency divider with GaAs advanced SAINT and air-bridge technology

1987 ◽  
Vol 23 (6) ◽  
pp. 300 ◽  
Author(s):  
K. Osafune ◽  
T. Enoki ◽  
M. Muraguchi ◽  
K. Ohwada
Keyword(s):  
Frequency Divider ◽  
Bridge Technology ◽  
Dynamic Frequency
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