Smart TDI readout circuit for long-wavelength IR detector

2002 ◽  
Vol 38 (16) ◽  
pp. 854 ◽  
Author(s):  
Byunghyuk Kim ◽  
Hee Chul Lee
Keyword(s):  
Readout Circuit ◽  
Ir Detector ◽  
Long Wavelength

Research on the stability of CTIA readout circuit for IR Detector (Conference Presentation)

2018 ◽  
Author(s):  
Zhiwei Huang ◽  
Xing Xu ◽  
Wuying Li ◽  
Yanping Zhong ◽  
Honghui Yuan ◽  
...  
Keyword(s):  
Readout Circuit ◽  
Ir Detector ◽  
The Stability

Research on the stability of readout circuit based on single grade OP-AMP for IR detector

2019 ◽  
Author(s):  
Honghui Yuan ◽  
YongPing Chen ◽  
Zhiwei Huang ◽  
Xing Xu ◽  
Wuying Li ◽  
...  
Keyword(s):  
Readout Circuit ◽  
Ir Detector ◽  
Op Amp ◽  
The Stability

SUPERLATTICE MATERIALS FOR THE NEXT GENERATION OF LONG WAVELENGTH INFRARED DETECTORS

2000 ◽  
Vol 10 (01) ◽  
pp. 47-53
Author(s):  
G. J. BROWN ◽  
F. SZMULOWICZ ◽  
K. MAHALINGAM ◽  
A. SAXLER ◽  
R. LINVILLE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Infrared Imaging ◽  
Infrared Detector ◽  
High Sensitivity ◽  
Next Generation ◽  
Ir Detector ◽  
Detector Arrays ◽  
Long Wavelength ◽  
Detector Materials ◽  
Long Wavelength Infrared

New infrared (IR) detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous space-based infrared imaging applications. To meet these stringent requirements, new materials must be designed and grown using semiconductor heterostructures, such as quantum wells and superlattices, to tailor new optical and electrical properties unavailable in the current generation of materials. One of the most promising materials is a strained layer supperlattice (SLS) composed of thin InAs and GaInSb layers. While this material shows theoretical and early experimental promise, there are still several materials growth and processing issues to be addressed before this material can be transitioned to the next generation of infrared detector arrays. Our research is focused on addressing the basic materials design, growth, optical properties, and electronic transport issue of these superlattices.

Long wavelength infrared readout circuit with background suppression function

2021 ◽  
Vol 50 (2) ◽  
pp. 20200266-20200266
Author(s):  
张武康 Wukang Zhang ◽  
陈洪雷 Honglei Chen ◽  
丁瑞军 Ruijun Ding
Keyword(s):  
Background Suppression ◽  
Readout Circuit ◽  
Long Wavelength ◽  
Long Wavelength Infrared

scholarly journals Non-uniformity study on readout circuit for uncooled IR detector

2015 ◽  
Vol 64 (11) ◽  
pp. 118503
Author(s):  
Yuan Hong-Hui ◽  
Chen Yong-Ping
Keyword(s):  
Readout Circuit ◽  
Ir Detector

Bandgap-Engineering of HgCdTe for Two-Color Ir Detector Arrays BY Movpe

1997 ◽  
Vol 484 ◽  
Author(s):  
P. Mitra ◽  
F. C. Case ◽  
S. L. Barnes ◽  
M. B. Reine ◽  
P. O'Dette ◽  
...  
Keyword(s):  
Depth Profile ◽  
Bandgap Engineering ◽  
Iodine Doping ◽  
Etch Pits ◽  
Ir Detector ◽  
Double Crystal ◽  
Detector Arrays ◽  
Long Wavelength ◽  
Double Heterojunction

AbstractRecent results on MOVPE growth of multilayer two-color HgCdTe detectors, for simultaneous and independent detection of medium wavelength (MW, 3–5 μm) and long wavelength (LW, 8–12 μm) bands, are reported. The structures are grown in situ on lattice matched (100) CdZnTe in the double-heterojunction p-n-N-P configuration. A barrier layer is placed between the LW and MW absorber layers to prevent diffusion of MW photocarriers into the LW junction and thereby eliminate spectral crosstalk. X-ray double crystal rocking curve widths are ∼ 45 arc-secs, indicating good epitaxial quality. SIMS depth profile measurements of these 28 μm thick structures show well-defined alloy compositions, and arsenic and iodine doping. SIMS data on a series of thirteen films show that good run-to-run repeatability is obtained on thicknesses, compositions, and dopant levels with values close to the device design targets. Depth profile of etch pits through the thickness of the films show etch pit densities in the range of 8×105-5×106 cm−2.

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