CMOS Readout Circuit with CTIA for Quantum Well Infrared Photodetector in Very Long Wavelength Infrared Application

2006 ◽  
Author(s):  
J Huang ◽  
F Guo ◽  
Z Zhu ◽  
N Li ◽  
W Lu
Keyword(s):  
Quantum Well ◽  
Readout Circuit ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetector ◽  
Long Wavelength Infrared

Quantum Well and Quantum Dot Based Detector Arrays for Infrared Imaging

2008 ◽  
Vol 1076 ◽  
Author(s):  
Sarath Gunapala ◽  
Sumith Bandara ◽  
Cory Hill ◽  
David Ting ◽  
John Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Imaging ◽  
Incident Light ◽  
Focal Plane Arrays ◽  
Infrared Photodetector ◽  
Detector Arrays ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetector ◽  
Long Wavelength Infrared ◽  
Reflection Grating

ABSTRACTA mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 320x256 pixel quantum well infrared photodetector (QWIP) dualband focal plane arrays (FPAs) have been demonstrated with excellent imagery. Currently, we are developing a 1024x1024 pixel simultaneous pixel co-registered dualband QWIP FPA. In addition, epitaxially grown self-assembled InAs/InGaAs/GaAs quantum dots (QDs) are exploited for the development of large-format FPAs. The Dot-in-a-Well (DWELL) structures were experimentally shown to absorb both 45° and normal incident light, therefore a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 microns, with peak detectivity reaching ∼ 1 × 1010 Jones at 77 K. The devices were fabricated into the first LWIR 640x512 pixel QDIP FPA, which has produced excellent infrared imagery with NETD of 40 mK at 60K operating temperature.

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