Effect of deep traps on sheet charge in AlGaN/GaN high electron mobility transistors

2001 ◽  
Vol 37 (25) ◽  
pp. 1550 ◽  
Author(s):  
P.B. Klein ◽  
S.C. Binari ◽  
K. Ikossi ◽  
A.E. Wickenden ◽  
D.D. Koleske ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Deep Traps ◽  
Sheet Charge

Deep Traps in AlGaN/GaN High Electron Mobility Transistors on SiC

2016 ◽  
Vol 5 (10) ◽  
pp. Q260-Q265 ◽  
Author(s):  
A. Y. Polyakov ◽  
N. B. Smirnov ◽  
A. A. Dorofeev ◽  
N. B. Gladysheva ◽  
E. S. Kondratyev ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Deep Traps

scholarly journals Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

2019 ◽  
Vol 125 (3) ◽  
pp. 035702 ◽  
Author(s):  
Philippe Ferrandis ◽  
Mariam El-Khatib ◽  
Marie-Anne Jaud ◽  
Erwan Morvan ◽  
Matthew Charles ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Electrical Characterization ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Deep Traps

Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

2013 ◽  
Vol 412 ◽  
pp. 126-129 ◽  
Author(s):  
Salah Saadaoui ◽  
Mohamed Mongi Ben Salem ◽  
Olfa Fathallah ◽  
Malek Gassoumi ◽  
Christophe Gaquière ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Deep Traps

Theoretical Charge Control Investigations in InN-Based Quantum Well Double Heterostructure High Electron Mobility Transistors (QW-DHEMTs)

2011 ◽  
Vol 403-408 ◽  
pp. 52-58 ◽  
Author(s):  
Md. Rejvi Kaysir ◽  
Rafiqul Islam
Keyword(s):  
Quantum Well ◽  
Charge Density ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Charge Control ◽  
Electron Mobility Transistors ◽  
Sheet Charge

In this paper, charge control mechanism and carrier features have been precisely investigated in InxGa1-xN/InN/InxGa1-xN based quantum-well double heterostructure high electron mobility transistors (QW-DHEMTs). A study of charge control in the InxGa1-xN/InN/InxGa1-xN structure is performed by self-consistently solving Schrödinger equation in conjunction with Poisson’s equation taking into account the spontaneous and piezoelectric polarization effects. The potential profile and the distribution of electron density in the channel as a function of gate voltage are investigated here. A large conduction band offset of about 2.2eV is obtained for the proposed device for In content x=0.05, which ensure better carrier confinement and higher sheet charge density. The influence of In composition(x) and doping concentration of InxGa1-xN upper barrier on sheet charge density and carrier distributions in channel is also presented. This analysis provides a platform to investigate the InN based QW-DHEMTs and to optimized their design.

Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors

2003 ◽  
Vol 83 (13) ◽  
pp. 2608-2610 ◽  
Author(s):  
A. Y. Polyakov ◽  
N. B. Smirnov ◽  
A. V. Govorkov ◽  
V. N. Danilin ◽  
T. A. Zhukova ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Deep Traps

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
Sign in / Sign up

Export Citation Format

Share Document