New ratio method for effective channel length and threshold voltage extraction in MOS transistors

2001 ◽  
Vol 37 (11) ◽  
pp. 717 ◽  
Author(s):  
B. Cretu ◽  
T. Boutchacha ◽  
G. Ghibaudo ◽  
F. Balestra
Keyword(s):  
Threshold Voltage ◽  
Channel Length ◽  
Ratio Method ◽  
Mos Transistors ◽  
Effective Channel

Gate Technology Issues for Silicon Mos Nanotransistors

1999 ◽  
Vol 584 ◽  
Author(s):  
D. M Tennant ◽  
G. L. Timp ◽  
L. E. Ocola ◽  
M. Green ◽  
T. Sorsch ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Dielectric ◽  
Ring Structure ◽  
Channel Length ◽  
Low Energy ◽  
Gate Length ◽  
Direct Write ◽  
Mos Transistors ◽  
Processing Elements ◽  
Effective Channel

AbstractThis article reviews technology issues in scaling conventional planar transistors to a physical gate length of 30nm that are expected to produce an effective channel length of 10 nm. Gate fabrication features direct write e-beam lithography to form a ring structure capable of exploring the practical limits of gate processing while requiring only a single level of lithography. Other processing elements include ultra-thin gate dielectric formation (∼ 0.6nm); highly selective transformer coupled plasma (TCP) etching; and low energy ion implantation. DC electrical results obtained for high performance n-MOS and p-MOS type nanotransistors made using this process are discussed as are simulations of sub-threshold currents for n-MOS transistors with physical gate lengths down to 26nm

Capacitances in 4H-SiC TSI-VJFETs

2017 ◽  
Vol 897 ◽  
pp. 591-594 ◽  
Author(s):  
Maria Kayambaki ◽  
Konstantinos Vamvoukakis ◽  
Antonis Stavrinidis ◽  
George Konstantinidis ◽  
Nikolaos Kornilios ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Channel Length ◽  
Physical Parameters ◽  
Device Physics ◽  
Capacitance Measurements ◽  
Channel Layer ◽  
Doping Profiles ◽  
Effective Channel ◽  
Drift Layer

Internal device capacitances in 4H-SiC based devices play an important role in determining their performances. In the present work, an analysis of the capacitance measurements in 4H-SiC trenched and single-implanted (TSI) gate vertical JFET TSI-VJFETs has been undertaken. Physical parameters such as threshold voltage and the related to its value effective channel length as well as channel layer and drift layer doping profiles have been extracted. The measured internal capacitances have been modeled by various models based on device physics.

Effect of Spacer Scaling on PMOS Transistors

2006 ◽  
Vol 913 ◽  
Author(s):  
Wai Shing Lau ◽  
Chee Wee Eng ◽  
David Vigar ◽  
Lap Chan ◽  
Soh Yun Siah
Keyword(s):  
Linear Relationship ◽  
Series Resistance ◽  
State Of The Art ◽  
Resistance Mechanism ◽  
Channel Length ◽  
Mos Transistors ◽  
Effective Channel

AbstractOur observation is that both the on-current and off-current of state-of-the-art p-channel MOS transistors tend to become larger when the L-shaped spacer becomes smaller due to two different mechanisms: a decrease in the effective channel length Leff (Mechanism A) and a decrease in the series resistance (Mechanism B). In our analysis, we use drain induced barrier lowering (DIBL) as a measure of Leff and we assume that there is a linear relationship between the on-current, the logarithm of the off current and DIBL. Our assumption is supported by our theoretical derivations.

scholarly journals Starter for Voltage Boost Converter to Harvest Thermoelectric Energy for Body-Worn Sensors

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4092
Author(s):  
Grzegorz Blakiewicz ◽  
Jacek Jakusz ◽  
Waldemar Jendernalik
Keyword(s):  
Threshold Voltage ◽  
Low Voltage ◽  
Boost Converter ◽  
Mos Transistors ◽  
Weak Inversion ◽  
Thermoelectric Energy ◽  
On Chip ◽  
Voltage Swing ◽  
High Output Voltage ◽  
High Output

This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip implementation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability of n-channel native MOS transistors with negative or near-zero threshold voltage in ULV oscillators is analyzed. The results demonstrate that a near-zero threshold voltage transistor operating in the weak inversion region is most advantageous for the considered application. The obtained results were used as a reference for design of a boost converter starter intended for integration in 180-nm CMOS X-FAB technology. In the selected technology, the most suitable transistor available with a negative threshold voltage was used. Despite using a transistor with a negative threshold voltage, a low startup voltage of 29 mV, a power consumption of 70 µW, and power conversion efficiency of about 1.5% were achieved. A great advantage of the proposed starter is that it eliminates a multistage charge pump necessary to obtain a voltage of sufficient value to supply the boost converter control circuit.

Effect of Technology Scaling on MOS Transistor Performance with High-K Gate Dielectrics

2002 ◽  
Vol 716 ◽  
Author(s):  
Nihar R. Mohapatra ◽  
Madhav P. Desai ◽  
Siva G. Narendra ◽  
V. Ramgopal Rao
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Channel Length ◽  
Mos Transistors ◽  
Short Channel ◽  
Technology Scaling ◽  
Mos Transistor ◽  
Wide Range ◽  
Impact Of Technology ◽  
The Impact

AbstractThe impact of technology scaling on the MOS transistor performance is studied over a wide range of dielectric permittivities using two-dimensional (2-D) device simulations. It is found that the device short channel performance is degraded with increase in the dielectric permittivity due to an increase in dielectric physical thickness to channel length ratio. For Kgate greater than Ksi, we observe a substantial coupling between source and drain regions through the gate dielectric. We provide extensive 2-D device simulation results to prove this point. Since much of the coupling between source and drain occurs through the gate dielectric, it is observed that the overlap length is an important parameter for optimizing DC performance in the short channel MOS transistors. The effect of stacked gate dielectric and spacer dielectric on the MOS transistor performance is also studied to substantiate the above observations.

Sign in / Sign up

Export Citation Format

Share Document