High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors

2000 ◽  
Vol 36 (22) ◽  
pp. 1866 ◽  
Author(s):  
B. Yang ◽  
D.J.H. Lambert ◽  
T. Li ◽  
C.J. Collins ◽  
M.M. Wong ◽  
...  
Keyword(s):  
High Performance ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Back Illuminated

High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes

2018 ◽  
Vol 29 (11) ◽  
pp. 9077-9082 ◽  
Author(s):  
W. Y. Han ◽  
Z. W. Zhang ◽  
Z. M. Li ◽  
Y. R. Chen ◽  
H. Song ◽  
...  
Keyword(s):  
High Performance ◽  
Mis Structure ◽  
Solar Blind ◽  
Back Illuminated

Solar Blind (Al,Ga)N Metal-Semiconductor-Metal Devices for High Performance Flame Detection

2003 ◽  
Vol 764 ◽  
Author(s):  
Mauro Mosca ◽  
Jean-Luc Reverchon ◽  
Nicolas Grandjean ◽  
Franck Omnès ◽  
Jean-Yves Duboz ◽  
...  
Keyword(s):  
Dark Current ◽  
High Performance ◽  
Crack Density ◽  
Chemical Vapor ◽  
Cutoff Wavelength ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
New Process ◽  
Flame Detection ◽  
Level Process

AbstractIn this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as ∼270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by both metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We observed that both the interdigitated electrodes and the contact areas contribute to the overall photocurrent. In order to avoid the parasitic current due to the contact pads, we developed a new process where the electrodes are deposited on the (Al,Ga)N surface whereas the contact pads are deposited on an insulator (dielectric) layer besides the electrodes. Some layers develop microcracks related to excess stress. In that case, we showed that both the dark current and the responsivity strongly depend on the crack density. By using our two-level process, we could reduce the parasitic effects of cracks on the dark current. Several dielectrics were tested and our results are reported; values of dark current < 10 fA have been measured at 10 V bias voltage. An extremely high performance can then be reached in these ultraviolet solar blind detectors.

High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD

2003 ◽  
Vol 798 ◽  
Author(s):  
Jean-Yves DUBOZ ◽  
Jean-Luc Reverchon ◽  
Mauro Mosca ◽  
Nicolas Grandjean ◽  
Franck Omnes
Keyword(s):  
High Performance ◽  
Blind Detection ◽  
Back Side ◽  
Detector Performance ◽  
Rejection Ratio ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Key Factor ◽  
Metal Organic ◽  
Dark Currents

ABSTRACTSolar blind detectors based on AlGaN grown by Molecular Beam Epitaxy and Metal Organic Vapor Phase Epitaxy have been fabricated and characterized. Metal Semiconductor Metal (MSM) detectors and vertical Schottky detectors have been realized, with a design that allows back side illumination. The growth was optimized in order to improve the layer quality, avoid crack formation, and provide the best detector performance. The technological process was also optimized in order to reduce the dark currents and improve the spectral rejection ratio, which is a key factor for solar blind detection. As a result, a rejection ratio of 5 decades between the UV (below 300 nm) and 400 nm, and a steep cut off limited by alloy fluctuations have been obtained. A noise equivalent power below 10 fW is obtained in MSM detectors.

The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD

2018 ◽  
Vol 6 (18) ◽  
pp. 4936-4942 ◽  
Author(s):  
Yiren Chen ◽  
Zhiwei Zhang ◽  
Hong Jiang ◽  
Zhiming Li ◽  
Guoqing Miao ◽  
...  
Keyword(s):  
High Performance ◽  
Solar Blind ◽  
Ultraviolet Photodetectors ◽  
Back Illuminated

The optimized growth of AlN templates via a mesothermal AlN interlayer method for high performance back-illuminated AlGaN-based solar-blind ultraviolet photodetectors is shown.

High Performance Solar Blind Detectors Based on AlGaN Grown by MBE on Si

2001 ◽  
Vol 188 (1) ◽  
pp. 325-328 ◽  
Author(s):  
J.-Y. Duboz ◽  
J.-L. Reverchon ◽  
D. Adam ◽  
B. Damilano ◽  
F. Semond ◽  
...  
Keyword(s):  
High Performance ◽  
Solar Blind
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