The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD

2018 ◽  
Vol 6 (18) ◽  
pp. 4936-4942 ◽  
Author(s):  
Yiren Chen ◽  
Zhiwei Zhang ◽  
Hong Jiang ◽  
Zhiming Li ◽  
Guoqing Miao ◽  
...  
Keyword(s):  
High Performance ◽  
Solar Blind ◽  
Ultraviolet Photodetectors ◽  
Back Illuminated

The optimized growth of AlN templates via a mesothermal AlN interlayer method for high performance back-illuminated AlGaN-based solar-blind ultraviolet photodetectors is shown.

High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes

2018 ◽  
Vol 29 (11) ◽  
pp. 9077-9082 ◽  
Author(s):  
W. Y. Han ◽  
Z. W. Zhang ◽  
Z. M. Li ◽  
Y. R. Chen ◽  
H. Song ◽  
...  
Keyword(s):  
High Performance ◽  
Mis Structure ◽  
Solar Blind ◽  
Back Illuminated

High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors

2000 ◽  
Vol 36 (22) ◽  
pp. 1866 ◽  
Author(s):  
B. Yang ◽  
D.J.H. Lambert ◽  
T. Li ◽  
C.J. Collins ◽  
M.M. Wong ◽  
...  
Keyword(s):  
High Performance ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Back Illuminated

High-performance amorphous BeZnO-alloy-based solar-blind ultraviolet photodetectors on rigid and flexible substrates

2020 ◽  
Vol 831 ◽  
pp. 154819 ◽  
Author(s):  
Wentao E ◽  
Mingkai Li ◽  
Dongxue Meng ◽  
Yang Cheng ◽  
Wang Fu ◽  
...  
Keyword(s):  
High Performance ◽  
Flexible Substrates ◽  
Solar Blind ◽  
Ultraviolet Photodetectors

Low-noise back-illuminated Al/sub x/Ga/sub 1-x/N-based p-i-n solar-blind ultraviolet photodetectors

2001 ◽  
Vol 37 (4) ◽  
pp. 538-545 ◽  
Author(s):  
Ting Li ◽  
D.J.H. Lambert ◽  
M.M. Wong ◽  
C.J. Collins ◽  
B. Yang ◽  
...  
Keyword(s):  
Low Noise ◽  
Solar Blind ◽  
Ultraviolet Photodetectors ◽  
Back Illuminated

scholarly journals Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Hogyoung Kim
Keyword(s):  
High Performance ◽  
Breakdown Field ◽  
Device Performance ◽  
Transport Mechanisms ◽  
Metal Contacts ◽  
Power Devices ◽  
Barrier Formation ◽  
Solar Blind ◽  
Critical Issues ◽  
Ultraviolet Photodetectors

AbstractGallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability. Recently, a considerable achievement has been obtained for the growth of high-quality β-Ga2O3 and high performance β-Ga2O3 based devices. However, rapid advance in device performance can be limited by the critical issues of metal contacts to β-Ga2O3 such as barrier height, leakage current, ohmic contact, and surface, interfacial and deep states. This article aims to provide a review on the recent studies in the control and understanding of metal contacts to β-Ga2O3, particularly in terms of the barrier formation. This review suggests that understanding the current transport mechanisms of metal contacts to β-Ga2O3 more thoroughly is necessary to enhance the performance, stability and reliability of β-Ga2O3 based devices.

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