Solar Blind (Al,Ga)N Metal-Semiconductor-Metal Devices for High Performance Flame Detection

2003 ◽  
Vol 764 ◽  
Author(s):  
Mauro Mosca ◽  
Jean-Luc Reverchon ◽  
Nicolas Grandjean ◽  
Franck Omnès ◽  
Jean-Yves Duboz ◽  
...  
Keyword(s):  
Dark Current ◽  
High Performance ◽  
Crack Density ◽  
Chemical Vapor ◽  
Cutoff Wavelength ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
New Process ◽  
Flame Detection ◽  
Level Process

AbstractIn this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as ∼270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by both metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We observed that both the interdigitated electrodes and the contact areas contribute to the overall photocurrent. In order to avoid the parasitic current due to the contact pads, we developed a new process where the electrodes are deposited on the (Al,Ga)N surface whereas the contact pads are deposited on an insulator (dielectric) layer besides the electrodes. Some layers develop microcracks related to excess stress. In that case, we showed that both the dark current and the responsivity strongly depend on the crack density. By using our two-level process, we could reduce the parasitic effects of cracks on the dark current. Several dielectrics were tested and our results are reported; values of dark current < 10 fA have been measured at 10 V bias voltage. An extremely high performance can then be reached in these ultraviolet solar blind detectors.

Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors

2018 ◽  
Vol 498 ◽  
pp. 35-42 ◽  
Author(s):  
Shashwat Rathkanthiwar ◽  
Anisha Kalra ◽  
Rangarajan Muralidharan ◽  
Digbijoy N. Nath ◽  
Srinivasan Raghavan
Keyword(s):  
Screw Dislocation ◽  
Dark Current ◽  
Metal Semiconductor Metal ◽  
Solar Blind

Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

2002 ◽  
Vol 743 ◽  
Author(s):  
Necmi Biyikli ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Turgut Tut ◽  
Ekmel Ozbay
Keyword(s):  
Power Density ◽  
Dark Current ◽  
Reverse Bias ◽  
Low Noise ◽  
Noise Power ◽  
Cutoff Wavelength ◽  
Solar Blind ◽  
Fabrication And Characterization ◽  
Noise Power Density

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

Solar-Blind Photodetector with Lower Dark Current and Higher Ilight/Idark Ratio Based on Mg0.38Zn0.62O Film Deposited by Pulsed Laser Deposition Method

2021 ◽  
Vol 21 (3) ◽  
pp. 1703-1710
Author(s):  
Pei-Jiang Cao ◽  
Qing Wang ◽  
Ch. N. Rao ◽  
Shun Han ◽  
Wang-Ying Xu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Dark Current ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cubic Phase ◽  
Cutoff Wavelength ◽  
Deposition Method ◽  
Solar Blind ◽  
Key Features ◽  
Quartz Substrates

In this study, pulsed laser deposition method (PLD) was employed to grow MgxZn1-xO films on quartz substrates. The optimal deposition temperature of 300 °C for MgxZn1-xO film was decided and Mg0.38Zn0.62O, Mg0.56Zn0.44O and Mg0.69Zn0.31O films were grown respectively using MgxZn1-xO targets with different Mg contents (x = 0.3, 0.5 and 0.7). As-deposited Mg0.38Zn0.62O film possessed the mixed-phase (hexagonal and cubic phase) structure, appropriate band gap of 4.68 eV and smaller surface roughness of 1.72 nm, and the solar-blind photodetector (PD) based on it was fabricated. The key features of our PD are the cutoff wavelength of 265 nm lying in solar-blind band, lower dark current (Idark) of 88 pA, higher peak responsivity of 0.10 A/W and bigger Ilight/Idark ratio of 1688, which provide the new idea for the application of solar-blind PDs based on MgxZn1-xO films.

scholarly journals Solar-Blind Photodetector Based on NaTaO3/TiO2 Composite Film with Enhanced Photoelectric Performance

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1178
Author(s):  
Min Zhang ◽  
Zhenjiang Li ◽  
Yunfei Zhao ◽  
Zhaofeng Wu ◽  
Jun Zhang ◽  
...  
Keyword(s):  
Response Time ◽  
Dark Current ◽  
High Performance ◽  
Uv Light ◽  
Fast Response ◽  
Current Ratio ◽  
Coated Glass Substrate ◽  
Ultraviolet Detectors ◽  
Photoelectric Performance ◽  
Solar Blind

In this study, ultraviolet detectors based on NaTaO3/TiO2 were fabricated with enhanced detection performance towards solar-blind (200–280 nm) light. A TiO2 seed layer was introduced and served as a buffer layer between the fluorine tin oxide (FTO)-coated glass substrate and the TiO2 film, which increased the adhesion between them. The periodic stability and photoelectric characteristics of the detectors were studied and analyzed. The detectors showed a high performance when illuminated by 265 nm and 254 nm UV light. At −15 V bias, the dark current of the detector was only 70 pA. Under the bias of −15 V and the illumination of 254 nm, the maximum photo-to-dark current ratio reached 20, and the response time was less than 300 ms. Moreover, the detector exhibited a fast response time and remained very stable after numerous testing cycles. These results demonstrate the potential application of NaTaO3/TiO2 composites in UV detection.

Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

2021 ◽  
Author(s):  
Zeng Liu ◽  
Maolin Zhang ◽  
Lili Yang ◽  
Shan Li ◽  
Shao-Hui Zhang ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Dark Current ◽  
Field Effect ◽  
Dynamic Range ◽  
Uv Light ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Enhancement Mode ◽  
Solar Blind ◽  
Metal Organic

Abstract In this work, a solar-blind ultraviolet (UV) photodetector based on a three-terminal enhancement-mode (E-mode) Si-doped β-Ga2O3 (β-Ga2O3:Si) metal-semiconductor field-effect transistor (MESFET) structure is demonstrated, whose threshold voltage (Vth) and subthreshold swing (SS) are 4.04 V and 1.4 V/dec, respectively. A 400-nm-thick β-Ga2O3:Si thin film is prepared on sapphire substrate by using metal-organic chemical vapor deposition (MOCVD) method. Controlling the channel currents by the Schottky gate voltage in the dark and under illuminations, the photodetector shows dark current (Idark) as low as 13.4 pA, photo-to-dark current ratio (PDCR) of 4.85×104 and linear dynamic range (LDR) of 29.6 dB, illuminated by 254 nm UV light of 245 μW cm-2. As the UV light is turned on and off, the output current rise and decay time (τr and τd) are 420 ms and 350 ms. Moreover, at drain voltage (Vds) of 5 V and gate voltage (Vgs) of 0 V, the responsivity (R), specific detectivity (D*) and external quantum efficiency (EQE) are achieved as 74 A W-1, 2.15×1014 cm Hz1/2 W-1 (Jones) and 3.6×104%, respectively.

Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications

2012 ◽  
Vol 12 (6) ◽  
pp. 2086-2090 ◽  
Author(s):  
Feng Xie ◽  
Hai Lu ◽  
Dunjun Chen ◽  
Xiaoli Ji ◽  
Feng Yan ◽  
...  
Keyword(s):  
High Temperature ◽  
Dark Current ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Temperature Applications

High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD

2003 ◽  
Vol 798 ◽  
Author(s):  
Jean-Yves DUBOZ ◽  
Jean-Luc Reverchon ◽  
Mauro Mosca ◽  
Nicolas Grandjean ◽  
Franck Omnes
Keyword(s):  
High Performance ◽  
Blind Detection ◽  
Back Side ◽  
Detector Performance ◽  
Rejection Ratio ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Key Factor ◽  
Metal Organic ◽  
Dark Currents

ABSTRACTSolar blind detectors based on AlGaN grown by Molecular Beam Epitaxy and Metal Organic Vapor Phase Epitaxy have been fabricated and characterized. Metal Semiconductor Metal (MSM) detectors and vertical Schottky detectors have been realized, with a design that allows back side illumination. The growth was optimized in order to improve the layer quality, avoid crack formation, and provide the best detector performance. The technological process was also optimized in order to reduce the dark currents and improve the spectral rejection ratio, which is a key factor for solar blind detection. As a result, a rejection ratio of 5 decades between the UV (below 300 nm) and 400 nm, and a steep cut off limited by alloy fluctuations have been obtained. A noise equivalent power below 10 fW is obtained in MSM detectors.

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