High-responsivity porous-SiC thin-film pn junction photodetector

1998 ◽  
Vol 34 (23) ◽  
pp. 2243 ◽  
Author(s):  
K.H. Wu ◽  
Y.K. Fang ◽  
W.T. Hsieh ◽  
J.J. Ho ◽  
W.J. Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
High Responsivity ◽  
Pn Junction ◽  
Porous Sic

High-Responsivity Solar-Blind Photodetector Based on $ \hbox{Mg}_{0.46}\hbox{Zn}_{0.54}\hbox{O}$ Thin Film

2012 ◽  
Vol 33 (7) ◽  
pp. 1033-1035 ◽  
Author(s):  
Qinghong Zheng ◽  
Feng Huang ◽  
Jin Huang ◽  
Qichan Hu ◽  
Dagui Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
High Responsivity ◽  
Solar Blind

scholarly journals A thin film efficient pn-junction thermoelectric device fabricated by self-align shadow mask

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Gilbert Kogo ◽  
Bo Xiao ◽  
Samuel Danquah ◽  
Harold Lee ◽  
Julien Niyogushima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Device ◽  
Shadow Mask ◽  
Pn Junction

scholarly journals Buckling Porous SiC Membranes

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 785
Author(s):  
Markus Leitgeb ◽  
Christopher Zellner ◽  
Manuel Dorfmeister ◽  
Michael Schneider ◽  
Ulrich Schmid
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Design Concepts ◽  
Photochemical Etching ◽  
Potential Applications ◽  
Etching Parameters ◽  
Porous Sic ◽  
Highly Porous

In preliminary studies it could be shown that single crystalline silicon carbide wafers can be porosified with metal assisted photochemical etching. Furthermore, the generation of porous areas which are locally defined is possible with this method. By adjusting the etching parameters, a highly porous layer (degree of porosity of 90%) can be formed which is under-etched by a line of breakage. By depositing a compressively stressed amorphous SiC:H thin film on top of a porous region, the a-SiC:H film can be locally separated from the substrate, resulting in a buckled membrane configuration. Such membranes might open up potential applications in MEMS design concepts.

Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters

2017 ◽  
Vol 9 (18) ◽  
pp. 15592-15598 ◽  
Author(s):  
Han Sol Lee ◽  
Kyunghee Choi ◽  
Jin Sung Kim ◽  
Sanghyuck Yu ◽  
Kyeong Rok Ko ◽  
...  
Keyword(s):  
Thin Film ◽  
Two Dimensional ◽  
Pn Junction

High-Responsivity and High-Sensitivity Graphene Dots/a-IGZO Thin-Film Phototransistor

2015 ◽  
Vol 36 (1) ◽  
pp. 44-46 ◽  
Author(s):  
Zingway Pei ◽  
Hsin-Cheng Lai ◽  
Jian-Yu Wang ◽  
Wei-Hung Chiang ◽  
Chien-Hsun Chen
Keyword(s):  
Thin Film ◽  
High Sensitivity ◽  
High Responsivity

Gas sensing properties of W6+–TiO2 thin film prepared by R.F. magnetron sputtering based on PN junction substrate

2013 ◽  
Vol 228 ◽  
pp. S77-S80 ◽  
Author(s):  
Huijun Zhang ◽  
Tingyu Han ◽  
Jingliang Cheng ◽  
Tooru Harigai ◽  
Akimitsu Hatta ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Tio2 Thin Film ◽  
Gas Sensing ◽  
Sensing Properties ◽  
Pn Junction ◽  
Gas Sensing Properties
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