InP-InGaAs uni-travelling-carrier photodiode for monolithic integration with heterojunction bipolar transistors

1998 ◽  
Vol 34 (23) ◽  
pp. 2270 ◽  
Author(s):  
U. Eriksson ◽  
S. Yamahata ◽  
K. Kurishima ◽  
T. Furuta ◽  
T. Ishibashi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Monolithic Integration

Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors

1984 ◽  
Vol 45 (3) ◽  
pp. 191-193 ◽  
Author(s):  
Jun Shibata ◽  
Ichiro Nakao ◽  
Yoichi Sasai ◽  
Soichi Kimura ◽  
Nobuyasu Hase ◽  
...  
Keyword(s):  
Laser Diode ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Monolithic Integration

Monolithic Integration of InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistors

1984 ◽  
Author(s):  
Jun Shibata ◽  
Yoichi Sasai ◽  
Ichiro Nakao ◽  
Soichi Kimura ◽  
Nobuyasu Hase ◽  
...  
Keyword(s):  
Laser Diode ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Monolithic Integration

scholarly journals Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 330 ◽  
Author(s):  
Marina Baryshnikova ◽  
Yves Mols ◽  
Yoshiyuki Ishii ◽  
Reynald Alcotte ◽  
Han Han ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Defect Density ◽  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Threading Dislocation ◽  
Contrast Imaging ◽  
Si Substrates ◽  
Selective Area ◽  
Transmission Electron ◽  
The Impact

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafers. In this report we extend NRE to GaSb for the integration of narrow bandgap heterostructures on Si. GaSb is deposited by selective area growth in narrow oxide trenches fabricated on 300 mm Si substrates to reduce the defect density by aspect ratio trapping. The GaSb growth is continued and the NR shape on top of the oxide pattern is manipulated via NRE to achieve a broad (001) NR surface. The impact of different seed layers (GaAs and InAs) on the threading dislocation and planar defect densities in the GaSb NRs is investigated as a function of trench width by using transmission electron microscopy (TEM) as well as electron channeling contrast imaging (ECCI), which provides significantly better defect statistics in comparison to TEM only. An InAs/GaSb multi-layer heterostructure is added on top of an optimized NR structure. The high crystal quality and low defect density emphasize the potential of this monolithic integration approach for infrared optoelectronic devices on 300 mm Si substrates.

Monolithic integration of heterojunction bipolar transistors and quantum well modulators on InP: growth optimization

1997 ◽  
Author(s):  
Milson T. Camargo Silva ◽  
Jane E. Zucker ◽  
Luiz R. Carrion ◽  
Charles H. Joyner ◽  
Andrew G. Dentai ◽  
...  
Keyword(s):  
Quantum Well ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Growth Optimization

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

(GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base

1983 ◽  
Vol 19 (10) ◽  
pp. 367 ◽  
Author(s):  
D.L. Miller ◽  
P.M. Asbeck ◽  
R.J. Anderson ◽  
F.H. Eisen
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors
Sign in / Sign up

Export Citation Format

Share Document