scholarly journals Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075013
Author(s):  
F. Meier ◽  
M. Protte ◽  
E. Baron ◽  
M. Feneberg ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Homo-Epitaxial and Selective Area Growth of 4H and 6H Silicon Carbide Using a Resistively Heated Vertical Reactor

1999 ◽  
Vol 572 ◽  
Author(s):  
Ebenezer Eshun ◽  
Crawford Taylor ◽  
M. G. Spencer ◽  
Kevin Kornegay ◽  
Ian Ferguson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Power Efficiency ◽  
Background Concentration ◽  
Selective Area Growth ◽  
Resistive Heating ◽  
Similar System ◽  
Selective Area ◽  
Area Growth ◽  
Order Of Magnitude ◽  
Resistively Heated

ABSTRACTSilicon carbide technology is rapidly developing into a production process. This is due to rapid progress in the development of high quality epitaxy and substrates. We report on the development of a resistively heated vertical reactor and it's application to homo-epitaxy and selective area growth. Epitaxial growth of 4H and 6H-SiC requires high temperatures (in excess of 1500°C). In this work we investigate resistive heating which offers advantages in cost, temperature uniformity and power efficiency of heating. However, resistive heating presents major technological challenges. Due to the power efficiencies possible with resistive heating we are able to obtain temperatures in excess of 1750°C. Using this system we have grown “state of the art” 4H and 6H-SiC. At 1580°C our background doping is p-type at a level of 3–5×1015cm−3 as measured by capacitance techniques in agreement with earlier results presented by investigators from Siemens Corp using a similar system. The background concentration increases by about an order of magnitude at 1680°C. This system has also been used to perform experiments with selective area growth of SiC using a graphite mask. This masking technology allows for the growth of SiC in specific regions at elevated temperature in excess of 1600°C.

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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