1.3 µm large spot-size laser diodes with laterally tapered active layer

1995 ◽  
Vol 31 (17) ◽  
pp. 1439-1440 ◽  
Author(s):  
H. Fukano ◽  
Y. Sakai ◽  
K. Yokoyama ◽  
Y. Kadota ◽  
M. Ueki ◽  
...  
Keyword(s):  
Active Layer ◽  
Laser Diodes ◽  
Spot Size ◽  
Large Spot

Highly reliable spot-size converter integrated laser diodes over a wide temperature range for access network systems

2001 ◽  
Vol 41 (1) ◽  
pp. 111-118 ◽  
Author(s):  
H Oohashi ◽  
M Fukuda ◽  
Y Kondo ◽  
M Yamamoto ◽  
Y Kadota ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
Laser Diodes ◽  
Access Network ◽  
Spot Size ◽  
Network Systems ◽  
Temperature Range

1.3 [micro sign]m laser diodes with butt-jointed selectively grown spot-size converters uniformly fabricated on a 2 in InP substrate

1996 ◽  
Vol 32 (12) ◽  
pp. 1099 ◽  
Author(s):  
H. Okamoto ◽  
Y. Suzuki ◽  
Y. Tohmori ◽  
M. Okamoto ◽  
Y. Kondo ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Spot Size ◽  
Inp Substrate

High-coupling-efficiency laser diodes integrated with spot-size converters fabricated on 2 inch InP substrates

1995 ◽  
Vol 31 (24) ◽  
pp. 2102-2104 ◽  
Author(s):  
M. Wada ◽  
K. Kishi ◽  
K. Kawano ◽  
Y. Noguchi ◽  
Y. Kadota ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Coupling Efficiency ◽  
Spot Size ◽  
Inp Substrates

Reliability of 1300-nm spot-size converter integrated laser diodes for low-cost optical modules in access networks

1998 ◽  
Vol 16 (7) ◽  
pp. 1302-1307 ◽  
Author(s):  
H. Oohashi ◽  
M. Fukuda ◽  
Y. Kondo ◽  
N. Wada ◽  
Y. Tohmori ◽  
...  
Keyword(s):  
Low Cost ◽  
Laser Diodes ◽  
Spot Size ◽  
Access Networks

Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure

2012 ◽  
Vol 10 (6) ◽  
pp. 061401-61403 ◽  
Author(s):  
Jianxin Zhang Jianxin Zhang ◽  
Lei Liu Lei Liu ◽  
Wei Chen Wei Chen ◽  
Anjin Liu Anjin Liu ◽  
Wenjun Zhou Wenjun Zhou ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Spot Size ◽  
Waveguide Structure ◽  
Divergence Angle ◽  
Large Spot

Reliable high-power (40 mW) operation of transverse-mode stabilised InGaAlP laser diodes with strained active layer

1992 ◽  
Vol 28 (11) ◽  
pp. 1069-1070 ◽  
Author(s):  
K. Nitta ◽  
M. Okajima ◽  
Y. Nishikawa ◽  
K. Itaya ◽  
G. Hatakoshi
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Transverse Mode
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