Reliable high-power (40 mW) operation of transverse-mode stabilised InGaAlP laser diodes with strained active layer

1992 ◽  
Vol 28 (11) ◽  
pp. 1069-1070 ◽  
Author(s):  
K. Nitta ◽  
M. Okajima ◽  
Y. Nishikawa ◽  
K. Itaya ◽  
G. Hatakoshi
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Transverse Mode

High-power (106 mW) CW operation of transverse-mode stabilised InGaAlP laser diodes with strained In0.62Ga0.38P active layer

1991 ◽  
Vol 27 (18) ◽  
pp. 1660 ◽  
Author(s):  
K. Nitta ◽  
K. Itaya ◽  
Y. Nishikawa ◽  
M. Ishikawa ◽  
M. Okajima ◽  
...  
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
Cw Operation

High-power operation of 630 nm-band transverse-mode stabilised AlGaInP laser diodes with current-blocking region near facets

1991 ◽  
Vol 27 (8) ◽  
pp. 661 ◽  
Author(s):  
H. Hamada ◽  
M. Shono ◽  
S. Honda ◽  
R. Hiroyama ◽  
K. Matsukawa ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Power Operation ◽  
Power Operation ◽  
Current Blocking

High power 630 nm band laser diodes with strain-compensated single quantum well active layer

1997 ◽  
Vol 33 (12) ◽  
pp. 1084 ◽  
Author(s):  
R. Hiroyama ◽  
T. Uetani ◽  
Y. Bessho ◽  
M. Shono ◽  
M. Sawada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well

High Power Operation of InGaP/InAlP Transverse Mode Stabilized Laser Diodes

1987 ◽  
Author(s):  
Masayuki ISHIKAWA ◽  
Kazuhiko ITAYA ◽  
Yukio WATANABE ◽  
Gen-ichi HATAKOSHI ◽  
Hideto SUGAWARA ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Power Operation ◽  
Power Operation

High Power Operation of InGaAlP Visible Light Laser Diodes with an In0.62Ga0.38P Active Layer

1991 ◽  
Author(s):  
K. Nitta ◽  
K. Itaya ◽  
Y. Nishikawa ◽  
M. Ishikawa ◽  
M. Okajima ◽  
...  
Keyword(s):  
Visible Light ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
High Power Operation ◽  
Power Operation

Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3862-3864 ◽  
Author(s):  
Koichi Nitta ◽  
Kazuhiko Itaya ◽  
Yukie Nishikawa ◽  
Masayuki Ishikawa ◽  
Masaki Okajima ◽  
...  
Keyword(s):  
Visible Light ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
High Power Operation ◽  
Power Operation

Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L590-L592 ◽  
Author(s):  
Kazuhiko Itaya ◽  
Masayuki Ishikawa ◽  
Koichi Nitta ◽  
Masaki Okajima ◽  
Gen-ichi Hatakoshi
Keyword(s):  
Visible Light ◽  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Power Operation ◽  
Power Operation

High-power 980-nm ridge waveguide laser diodes including an asymmetrically expanded optical field normal to the active layer

2002 ◽  
Vol 38 (8) ◽  
pp. 1081-1088 ◽  
Author(s):  
K.I. Shigihara ◽  
K. Kawasaki ◽  
Y. Yoshida ◽  
S. Yamamura ◽  
T. Yagi ◽  
...  
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Optical Field ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode

1999 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Toshio Matsushita ◽  
Takashi Mukai
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Transverse Mode

400-nm Band AlGaInN-Based High Power Laser Diodes

2001 ◽  
Vol 693 ◽  
Author(s):  
Takeharu Asano ◽  
Motonobu Takeya ◽  
Tsuyoshi Tojyo ◽  
Shinro Ikeda ◽  
Takashi Mizuno ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Active Layer ◽  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Epitaxial Lateral Overgrowth ◽  
Direct Result ◽  
Electron Blocking Layer ◽  
Low Dislocation Density ◽  
Operating Current

AbstractHigh-power AlGaInN-based laser diodes (LDs) operating with high reliability in the 400-nm band have been successfully fabricated using a high-productivity process. Epitaxial lateral overgrowth (ELO) over a 10-m m region was employed to obtain a broad growth area with low dislocation density, and the thickness of the ELO-GaN layer was limited to approximately 5 m in order to minimize wafer bending. These techniques allow for the easy and reproducible alignment of the laser stripe on the region of low dislocation density. The insertion of a GaInN interlayer between the active layer and the AlGaN electron blocking layer was effective for reducing the strain between these two layers, resulting in homogeneous luminescence from the active layer and lower operating current. A mean time to failure of 15000 h under 30-mW continuous-wave operation at 60°C was realized as a direct result of the lower operating current. Productivity was remarkably improved by performing epitaxial growth on a 3-inch substrate. Highly uniform laser wafers were successfully fabricated by achieving minimal temperature variation (1000 ±7°C) over the 3-inch substrate. The resultant laser structures varied in thickness by only ±5%, and the photoluminescence wavelength was consistent within ±2.5 nm over the entire 3-inch substrate. The average threshold current of 550 LDs selected from a fourth wafer was 32.7 mA, with small standard deviation of 3.2 mA.

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