Selective gate recess etching of GaInAs/AlInAs based HEMTs using a CH4/H2 plasma without subsequent annealing

1994 ◽  
Vol 30 (15) ◽  
pp. 1251-1252 ◽  
Author(s):  
K.M. Thomas ◽  
W. Bächtold ◽  
W. Patrick
Keyword(s):  
Subsequent Annealing ◽  
Gate Recess

The scandium-rich indide Sc50Pt13.47In2.53

2020 ◽  
Vol 75 (6-7) ◽  
pp. 715-720 ◽  
Author(s):  
Nataliya L. Gulay ◽  
Jutta Kösters ◽  
Yaroslav M. Kalychak ◽  
Rainer Pöttgen
Keyword(s):  
Single Crystal ◽  
Intermetallic Phases ◽  
Subsequent Annealing ◽  
Induction Melting ◽  
X Ray

AbstractThe scandium-rich indide Sc50Pt13.47In2.53 was obtained by induction melting of the elements and subsequent annealing. The structure of Sc50Pt13.47In2.53 has been refined from single-crystal X-ray diffractometer data: Fm$\overline{3}$, a = 1774.61(3) pm, wR2 = 0.0443, 1047 F2 values and 35 variables. Sc50Pt13.47In2.53 is isopointal with the intermetallic phases Sc50Co12.5In3.5, Sc50Rh13.3In2.7, Sc50Ir13.6In2.4, Ag7+xMg26−x and Ga4.55Mg21.85Pd6.6 (Pearson code cF264 and Wyckoff sequence ih2fecba). Two of the eight crystallographic sites in the structure show mixed occupancies: M1 (≡Pt20.70In10.30) and M2 (≡Pt30.76In20.24). The structure contains four basic polyhedra: M2@Sc8 cubes, Pt1@Sc10 sphenocorona and slightly distorted M1@Sc12 and In3@Sc12 icosahedra. The polyhedra are condensed via common scandium corners and edges. The various Sc–Sc distances range from 302–334 pm and are indicative of substantial Sc–Sc bonding, stabilizing the Sc50Pt13.47In2.53 structure.

High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

2017 ◽  
Vol 38 (6) ◽  
pp. 771-774 ◽  
Author(s):  
Yen-Ku Lin ◽  
Shuichi Noda ◽  
Chia-Ching Huang ◽  
Hsiao-Chieh Lo ◽  
Chia-Hsun Wu ◽  
...  
Keyword(s):  
High Frequency ◽  
High Performance ◽  
High Frequency Power ◽  
Gate Recess ◽  
Frequency Power

Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

2005 ◽  
Vol 26 (1) ◽  
pp. 5-7 ◽  
Author(s):  
Wen-Kai Wang ◽  
Po-Chen Lin ◽  
Ching-Huao Lin ◽  
Cheng-Kuo Lin ◽  
Yi-Jen Chan ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Gan Hemt ◽  
Cap Layer ◽  
Gate Recess
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