Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate

1994 ◽  
Vol 30 (10) ◽  
pp. 823-825 ◽  
Author(s):  
S.S. Lu ◽  
C.L. Huang
Keyword(s):  
Gaas Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Layer Structure ◽  
Strained Layer ◽  
Piezoelectric Field ◽  
Effect Transistor

Fabrication of Enhancement-Mode GaN-Based Metal–Insulator-Semiconductor Field Effect Transistor

2000 ◽  
Vol 622 ◽  
Author(s):  
P. Chen ◽  
R. Zhang ◽  
Y.G. Zhou ◽  
S.Y. Xie ◽  
Z.Y. Luo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Voltage Measurement ◽  
Device Structure ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Piezoelectric Field ◽  
Effect Transistor

ABSTRACTAn enhancement-mode GaN metal-insulator-semiconductor field-effect transistor was successfully fabricated on a GaN/AlGaN/GaN double heterojunction structure with SiO2 as insulator layer. The enhancement mode DC characteristics have been achieved in the device with a gate length of 6 μm and a gate width of 100 μm. The device exhibited a DC transconductance of 0.6 mS/mm and a maximum drain-source current of 5 mA/mm. The gate leakage current is lower than 10−6 A at a bias of -10 V and the gate breakdown voltage is higher than 20 V. The channel stands a good chance of forming by hole accumulation between the top GaN layer and the AlGaN layer. The p-channel can be attributed to the presence of a piezoelectric field in the heterojunction, and the strongly asymmetric band bending and carriers distribution induced by the piezoelectric field. High-frequency capacitance-voltage measurement also gives a circumstantial evidence of the presence of a p-channel in the device structure.

Strained layer InGaAs channel negative‐resistance field‐effect transistor

1989 ◽  
Vol 65 (1) ◽  
pp. 378-380 ◽  
Author(s):  
M. E. Favaro ◽  
G. E. Fernández ◽  
T. K. Higman ◽  
P. K. York ◽  
L. M. Miller ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Resistance ◽  
Strained Layer ◽  
Effect Transistor

Thermodynamically stablep‐channel strained‐layer AlGaAs/InGaAs/GaAs heterostructure field effect transistor

1994 ◽  
Vol 65 (6) ◽  
pp. 752-754 ◽  
Author(s):  
A. G. Baca ◽  
T. E. Zipperian ◽  
A. J. Howard ◽  
J. F. Klem ◽  
C. P. Tigges
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Strained Layer ◽  
Effect Transistor

Effect of strained layer on GaAs power field effect transistor using low temperature buffer

1995 ◽  
Vol 150 ◽  
pp. 1246-1251
Author(s):  
Seigo Sano ◽  
Ebrahim Heidarpour ◽  
Kazuo Nanbu ◽  
Takeshi Igarashi ◽  
Junji Saito ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Strained Layer ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document