Unstrained, modulation-doped, In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As field-effect transistor grown on GaAs substrate

N.C. Tien; J. Chen; J.M. Fernandez; H.H. Wieder

doi:10.1109/55.192864

Unstrained, modulation-doped, In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As field-effect transistor grown on GaAs substrate

IEEE Electron Device Letters ◽

10.1109/55.192864 ◽

1992 ◽

Vol 13 (12) ◽

pp. 621-623 ◽

Cited By ~ 13

Author(s):

N.C. Tien ◽

J. Chen ◽

J.M. Fernandez ◽

H.H. Wieder

Keyword(s):

Gaas Substrate ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.93946 ◽

1983 ◽

Vol 42 (4) ◽

pp. 380-382 ◽

Cited By ~ 22

Author(s):

O. Wada ◽

S. Miura ◽

M. Ito ◽

T. Fujii ◽

T. Sakurai ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Gaas Substrate ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Effect Transistor

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Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate

Electronics Letters ◽

10.1049/el:19940432 ◽

1994 ◽

Vol 30 (10) ◽

pp. 823-825 ◽

Cited By ~ 6

Author(s):

S.S. Lu ◽

C.L. Huang

Keyword(s):

Gaas Substrate ◽

Field Effect ◽

Field Effect Transistor ◽

Layer Structure ◽

Strained Layer ◽

Piezoelectric Field ◽

Effect Transistor

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Molecular beam epitaxy growth of InAs and In[sub 0.8]Ga[sub 0.2]As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2912086 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1187

Author(s):

Ning Li ◽

Eric S. Harmon ◽

David B. Salzman ◽

Dmitri N. Zakharov ◽

Jong-Hyeok Jeon ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Gaas Substrate ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Molecular Beam Epitaxy Growth ◽

Effect Transistor

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Self-Aligned Ni-Germanide Ohmic Contact to n-Type GaAs Substrate for High Mobility III-V Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET)

ECS Meeting Abstracts ◽

10.1149/ma2014-02/31/1660 ◽

2014 ◽

Keyword(s):

Metal Oxide ◽

Ohmic Contact ◽

Gaas Substrate ◽

Field Effect ◽

Field Effect Transistor ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Design theory and library development of vertical dual carrier field effect transistor ASIC and SOC on SiO/sub 2/ and insulating GaAs substrate with effective channel length of 5-30nm

2003 5th International Conference on ASIC Proceedings (IEEE Cat No 03TH8690) ICASIC-03 ◽

10.1109/icasic.2003.1277464 ◽

2003 ◽

Author(s):

Huang ◽

Yang ◽

Huang

Keyword(s):

Gaas Substrate ◽

Field Effect ◽

Design Theory ◽

Field Effect Transistor ◽

Channel Length ◽

Library Development ◽

Effect Transistor ◽

Effective Channel

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Oxide Field-Effect Transistor with Polymer-Based Gate Insulator

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.139.207 ◽

2019 ◽

Vol 139 (3) ◽

pp. 207-210

Author(s):

Kohei Fujiwara

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Insulator ◽

Effect Transistor

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Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

IEICE Transactions on Electronics ◽

10.1587/transele.e93.c.540 ◽

2010 ◽

Vol E93-C (5) ◽

pp. 540-545 ◽

Cited By ~ 10

Author(s):

Dong Seup LEE ◽

Hong-Seon YANG ◽

Kwon-Chil KANG ◽

Joung-Eob LEE ◽

Jung Han LEE ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

IEICE Transactions on Electronics ◽

10.1587/transele.e97.c.677 ◽

2014 ◽

Vol E97.C (7) ◽

pp. 677-682

Author(s):

Sung YUN WOO ◽

Young JUN YOON ◽

Jae HWA SEO ◽

Gwan MIN YOO ◽

Seongjae CHO ◽

...

Keyword(s):

Silicon Substrate ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

Proceedings of Universities ELECTRONICS ◽

10.24151/1561-5405-2019-24-4-407-414 ◽

2019 ◽

Vol 24 (4) ◽

pp. 407-414

Author(s):

Oksana V. Gubanova ◽

◽

Evgeniy V. Kuznetsov ◽

Elena N. Rybachek ◽

Alexander N. Saurov ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Semiconducting - Carbon Nanotube Field Effect Transistor Based Logic Gates

i-manager’s Journal on Electronics Engineering ◽

10.26634/jele.1.4.1512 ◽

2011 ◽

Vol 1 (4) ◽

pp. 56-60

Author(s):

V. Saravanan ◽

V. Kannan

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

Logic Gates ◽

Effect Transistor

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