Strained layer InGaAs channel negative‐resistance field‐effect transistor

M. E. Favaro; G. E. Fernández; T. K. Higman; P. K. York; L. M. Miller; J. J. Coleman

doi:10.1063/1.342552

Strained layer InGaAs channel negative‐resistance field‐effect transistor

Journal of Applied Physics ◽

10.1063/1.342552 ◽

1989 ◽

Vol 65 (1) ◽

pp. 378-380 ◽

Cited By ~ 15

Author(s):

M. E. Favaro ◽

G. E. Fernández ◽

T. K. Higman ◽

P. K. York ◽

L. M. Miller ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Negative Resistance ◽

Strained Layer ◽

Effect Transistor

Download Full-text

Deterministic chaos oscillator based on a bipolar and field-effect transistor structure with negative resistance

2016 Dynamics of Systems, Mechanisms and Machines (Dynamics) ◽

10.1109/dynamics.2016.7819081 ◽

2016 ◽

Cited By ~ 1

Author(s):

Andriy Semenov

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Deterministic Chaos ◽

Negative Resistance ◽

Transistor Structure ◽

Effect Transistor

Download Full-text

AlGaAs/GaAs charge injection transistor/negative resistance field‐effect transistor fabricated with shallow Pd/Ge ohmic contacts

Applied Physics Letters ◽

10.1063/1.111187 ◽

1994 ◽

Vol 64 (3) ◽

pp. 306-308 ◽

Cited By ~ 15

Author(s):

Jiun‐Tsuen Lai ◽

Joseph Ya‐min Lee

Keyword(s):

Field Effect ◽

Ohmic Contacts ◽

Field Effect Transistor ◽

Charge Injection ◽

Negative Resistance ◽

Effect Transistor

Download Full-text

The additive white Gaussian noise impact on the deterministic chaos oscillator based on a field-effect transistor structure with negative resistance

2016 International Conference Radio Electronics & Info Communications (UkrMiCo) ◽

10.1109/ukrmico.2016.7739614 ◽

2016 ◽

Author(s):

Andriy Semenov

Keyword(s):

Gaussian Noise ◽

Field Effect ◽

Field Effect Transistor ◽

Additive White Gaussian Noise ◽

Deterministic Chaos ◽

Negative Resistance ◽

White Gaussian Noise ◽

Transistor Structure ◽

Noise Impact ◽

Effect Transistor

Download Full-text

An In0.2Ga0.8As/GaAs, modulation-doped, strained-layer superlattice field-effect transistor

10.1109/iedm.1983.190603 ◽

1983 ◽

Author(s):

T.E. Zipperian ◽

L.R. Dawson ◽

G.C. Osbourn ◽

I.J. Fritz

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Strained Layer ◽

Strained Layer Superlattice ◽

Effect Transistor

Download Full-text

Absolute Negative Resistance in Ballistic Variable Threshold Field Effect Transistor

Future Trends in Microelectronics ◽

10.1002/9780470168264.ch26 ◽

2007 ◽

pp. 296-303

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Negative Resistance ◽

Threshold Field ◽

Variable Threshold ◽

Effect Transistor

Download Full-text

p‐channel negative resistance field‐effect transistor

Applied Physics Letters ◽

10.1063/1.102564 ◽

1990 ◽

Vol 56 (11) ◽

pp. 1058-1060 ◽

Cited By ~ 4

Author(s):

M. E. Favaro ◽

L. M. Miller ◽

R. P. Bryan ◽

J. J. Alwan ◽

J. J. Coleman

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Negative Resistance ◽

Effect Transistor

Download Full-text

THE DETERMINISTIC CHAOS OSCILLATOR BASED ON A FIELD-EFFECT TRANSISTOR STRUCTURE WITH NEGATIVE RESISTANCE FOR TELECOMMUNICATIONS SYSTEMS

Information and Telecommunication Sciences ◽

10.20535/2411-2976.22016.46-53 ◽

2016 ◽

Vol 0 (2) ◽

pp. 46-53

Author(s):

Andriy Semenov

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Deterministic Chaos ◽

Negative Resistance ◽

Transistor Structure ◽

Effect Transistor

Download Full-text

Negative resistance of a modified insulated-gate field-effect transistor

Proceedings of the IEEE ◽

10.1109/proc.1974.9575 ◽

1974 ◽

Vol 62 (8) ◽

pp. 1163-1165 ◽

Cited By ~ 11

Author(s):

K. Lehovec ◽

R. Zuleeg

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Negative Resistance ◽

Effect Transistor

Download Full-text

Field-effect-transistor negative-resistance circuit

Electronics Letters ◽

10.1049/el:19660353 ◽

1966 ◽

Vol 2 (11) ◽

pp. 420 ◽

Cited By ~ 2

Author(s):

Kendall L. Su

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Negative Resistance ◽

Effect Transistor

Download Full-text

Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate

Electronics Letters ◽

10.1049/el:19940432 ◽

1994 ◽

Vol 30 (10) ◽

pp. 823-825 ◽

Cited By ~ 6

Author(s):

S.S. Lu ◽

C.L. Huang

Keyword(s):

Gaas Substrate ◽

Field Effect ◽

Field Effect Transistor ◽

Layer Structure ◽

Strained Layer ◽

Piezoelectric Field ◽

Effect Transistor

Download Full-text