Lead chalcogenide implanted diode lasers in CW operation above 77 K

1994 ◽  
Vol 30 (7) ◽  
pp. 571-573 ◽  
Author(s):  
J. Xu ◽  
A. Lambrecht ◽  
M. Tacke
Keyword(s):  
Diode Lasers ◽  
Lead Chalcogenide ◽  
Cw Operation

CW operation of widely and continuously tunable micromachined-coupled-cavity diode lasers

1986 ◽  
Vol 22 (17) ◽  
pp. 919 ◽  
Author(s):  
R.K. Defreez ◽  
J. Puretz ◽  
R.A. Elliott ◽  
J. Orloff ◽  
L.W. Swanson
Keyword(s):  
Diode Lasers ◽  
Cw Operation ◽  
Coupled Cavity

V-8 MBE homostructure PbTe diode lasers with CW operation up to 100 K

1977 ◽  
Vol 24 (9) ◽  
pp. 1214-1214 ◽  
Author(s):  
J.N. Walpole ◽  
S.H. Groves ◽  
T.C. Harman
Keyword(s):  
Diode Lasers ◽  
Cw Operation

1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature

1977 ◽  
Vol 16 (7) ◽  
pp. 1273-1274 ◽  
Author(s):  
Kunishige Oe ◽  
Seigo Ando ◽  
Koichi Sugiyama
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation

CW operation of monolithic arrays of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and parabolic deflecting mirrors

1993 ◽  
Vol 5 (10) ◽  
pp. 1146-1149 ◽  
Author(s):  
J.P. Donnelly ◽  
W.D. Goodhue ◽  
C.A. Wang ◽  
R.J. Bailey ◽  
G.A. Lincoln ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Cw Operation

Embossed monomode single heterostructure distributed feedback lead chalcogenide diode lasers

1992 ◽  
Vol 28 (23) ◽  
pp. 2180 ◽  
Author(s):  
J. John ◽  
A. Fach ◽  
H. Böttner ◽  
M. Tacke
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback ◽  
Lead Chalcogenide

High power cw operation of phased array diode lasers with diffraction limited output beam

1985 ◽  
Vol 47 (11) ◽  
pp. 1134-1136 ◽  
Author(s):  
D. F. Welch ◽  
D. Scifres ◽  
P. Cross ◽  
H. Kung ◽  
W. Streifer ◽  
...  
Keyword(s):  
High Power ◽  
Phased Array ◽  
Diode Lasers ◽  
Output Beam ◽  
Cw Operation ◽  
Limited Output

scholarly journals cw operation of distributed‐feedback GaAs‐GaAlAs diode lasers at temperatures up to 300 K

1975 ◽  
Vol 27 (7) ◽  
pp. 403-405 ◽  
Author(s):  
M. Nakamura ◽  
K. Aiki ◽  
J. Umeda ◽  
A. Yariv
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback ◽  
Cw Operation

Preparation and Applications of Lead Chalcogenide Diode Lasers

1986 ◽  
Vol 90 ◽  
Author(s):  
Dale L. Partin
Keyword(s):  
Active Region ◽  
Fiber Optics ◽  
Diode Lasers ◽  
Tunable Laser ◽  
Alloy System ◽  
High Energy ◽  
Cryogenic Cooling ◽  
Lead Chalcogenide ◽  
Leakage Currents ◽  
The Status

ABSTRACTLead chalcogenide diode lasers are useful for spectroscopic and fiber optics applications in the mid-infrared (2.5-30 μm) wavelength range. These devices have previously required cryogenic cooling (<100 K) for CW operation. This limitation has been overcome through the use of a new, lattice-matched alloy system, Pb1-xEuxSeyTe1-y as well as the introduction of advanced, quantum well active region device structures grown by molecular beam epitaxy (MBE). Operating temperatures have been increased to 175 K CW (at 4.4 μm) and to 270 K pulsed (at 3.9 μm). Thermal leakage currents out of the device active region appear to be limiting device performance. This has led to the study of band offsets in PbEuSeTe/PbTe heterojunctions as well as to exploration of alternative high energy band gap alloys of PbTe with Ge, Yb, Ca, Sr, and Ba. The status of this work and examples of ultrahigh resolution studies done with these tunable laser sources will be included.

TP-B5 SH-structure and Cd-diffused Pb1-xSnxSe diode lasers for CW operation at 16 µm

1979 ◽  
Vol 26 (11) ◽  
pp. 1841-1841 ◽  
Author(s):  
R. Grisar ◽  
A. Heime ◽  
H. Pfeiffer ◽  
H. Preier
Keyword(s):  
Diode Lasers ◽  
Cw Operation
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