1% efficiency Al0.3Ga0.7As planar-doped-barrier electron emitters

1993 ◽  
Vol 29 (22) ◽  
pp. 1997 ◽  
Author(s):  
W.-N. Jiang ◽  
U.K. Mishra
Keyword(s):  
Electron Emitters

scholarly journals Carbon Nanotube Electron Sources: From Electron Beams to Energy Conversion and Optophononics

2014 ◽  
Vol 2014 ◽  
pp. 1-23 ◽  
Author(s):  
Alireza Nojeh
Keyword(s):  
Carbon Nanotubes ◽  
Field Emission ◽  
Electron Emission ◽  
Electron Beams ◽  
Thermionic Emission ◽  
Secondary Emission ◽  
Electron Sources ◽  
Field Emitters ◽  
Electron Microscopes ◽  
Electron Emitters

Carbon nanotubes have a host of properties that make them excellent candidates for electron emitters. A significant amount of research has been conducted on nanotube-based field-emitters over the past two decades, and they have been investigated for devices ranging from flat-panel displays to vacuum tubes and electron microscopes. Other electron emission mechanisms from carbon nanotubes, such as photoemission, secondary emission, and thermionic emission, have also been studied, although to a lesser degree than field-emission. This paper presents an overview of the topic, with emphasis on these less-explored mechanisms, although field-emission is also discussed. We will see that not only is electron emission from nanotubes promising for electron-source applications, but also its study could reveal unusual phenomena and open the door to new devices that are not directly related to electron beams.

Field-emission properties of novel palladium nanogaps for surface conduction electron-emitters

2007 ◽  
Vol 18 (47) ◽  
pp. 475708 ◽  
Author(s):  
Hsiang-Yu Lo ◽  
Yiming Li ◽  
Hsueh-Yung Chao ◽  
Chih-Hao Tsai ◽  
Fu-Ming Pan
Keyword(s):  
Field Emission ◽  
Conduction Electron ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Emitters ◽  
Surface Conduction

Carbon nanotube/nanodiamond structures: An innovative concept for stable and ready-to-start electron emitters

2009 ◽  
Vol 95 (22) ◽  
pp. 222113 ◽  
Author(s):  
V. Guglielmotti ◽  
S. Chieppa ◽  
S. Orlanducci ◽  
E. Tamburri ◽  
F. Toschi ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electron Emitters ◽  
Innovative Concept

scholarly journals Model of Field Electron Emission from the Edge of Flat Graphene into Vacuum

2019 ◽  
Vol 10 (1) ◽  
pp. 61-68
Author(s):  
N. A. Poklonski ◽  
A. I. Siahlo ◽  
S. A. Vyrko ◽  
S. V. Ratkevich ◽  
A. T. Vlassov
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Graphene Sheet ◽  
Current Density ◽  
Electron Emission ◽  
Field Effect ◽  
Field Electron Emission ◽  
Graphene Plane ◽  
Field Electron ◽  
Electron Emitters

Graphene-based nanostructures are the promising materials for applications as electron emitters.The aim of the work is to study the field electron emission from the edge of a single graphene plane.In the semi-classical approximation, a model of field electron emission from the edge of a rectangular graphene sheet has been developed.The current density of field electron emission into vacuum from the edge of a flat graphene sheet was calculated depending on the magnitude of the pulling electric field strength.The analysis and comparison of limiting emission currents from graphene and from bulk systems have been carried out.The results of the work can be used in the development of graphene-based field effect cathodes.

Novel x-ray sources and systems using gated electron emitters

2002 ◽  
Author(s):  
Robert R. Whitlock ◽  
David S. Hsu ◽  
Jonathan L. Shaw ◽  
Michael I. Bell ◽  
Sherra E. Kerns ◽  
...  
Keyword(s):  
X Ray ◽  
Electron Emitters

Characterization of Er/O-doped Si-LEDs with Low Thermal Quenching

2005 ◽  
Vol 866 ◽  
Author(s):  
A. Karim ◽  
W.-X. Ni ◽  
A. Elfving ◽  
P.O.Å. Persson ◽  
G.V. Hansson
Keyword(s):  
Temperature Dependence ◽  
Reverse Bias ◽  
Thermal Quenching ◽  
Constant Current ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Low Energy Electrons ◽  
Higher Temperature ◽  
Electron Emitters

AbstractElectroluminescence studies of MBE-grown Er/O-doped Si-diodes at reverse bias have been done. For some devices there is much reduced thermal quenching of the emission at 1.54 νm. There are examples where the temperature dependence is abnormal in that the intensity for a constant current even increases with temperature up to e.g. 80 °C. These devices have been studied with cross-sectional transmission electron microscopy to see the microstructure of the Er/O-doped layers as well as the B-doped SiGe-layers that are used as electron emitters during reverse bias. Although there are defects in the layers there is no evidence for large thick precipitates of SiO2. While reduced thermal quenching often is attributed to having the Er-ions within SiO2 layers, this is not the case for our structures as evidenced by our TEM-studies. The origin of the abnormal temperature dependence is attributed to the two mechanisms of breakdown in the reverse-biased diodes. At low temperature the breakdown current is mainly due to avalanche resulting in low-energy electrons and holes that quenches the intensity by Auger deexcitation of the Er-ions. At higher temperature the breakdown current is mainly phonon-assisted tunneling which results in a more efficient pumping with less de-excitation of the Er-ions. Finally at the highest temperatures the thermal quenching sets in corresponding to an activation energy of 125 meV, which is slightly lower than 150 meV that has been reported in other studies.

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