Low dark current quasi-Schottky barrier MSM-photodiode structures onn-Ga0.47In0.53As Withp+-Ga0.47In0.53As cap layer

1992 ◽  
Vol 28 (11) ◽  
pp. 992-995 ◽  
Author(s):  
S.V. Averin ◽  
A. Kohl ◽  
R. Müller ◽  
A. Mesquida Küsters ◽  
J. Wisser ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Dark Current ◽  
Cap Layer

Reduction of Dark Current in AlGaN–GaN Schottky-Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer

2004 ◽  
Vol 25 (9) ◽  
pp. 593-595 ◽  
Author(s):  
M.L. Lee ◽  
J.K. Sheu ◽  
Y.K. Su ◽  
S.J. Chang ◽  
W.C. Lai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Dark Current ◽  
Cap Layer

High Photo-to-Dark-Current Ratio in SiGe/Si Schottky-Barrier Photodetectors by Using an a-Si:H Cap Layer

2007 ◽  
Vol 54 (9) ◽  
pp. 2386-2391 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Y.H. Chen ◽  
C.Y. Kung ◽  
J.C. Liu
Keyword(s):  
Schottky Barrier ◽  
Dark Current ◽  
Current Ratio ◽  
Cap Layer

Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

2003 ◽  
Vol 798 ◽  
Author(s):  
G. C. Chi ◽  
J. K. Sheu ◽  
M. L. Lee ◽  
C. J. Kao ◽  
Y. K. Su ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dark Current ◽  
Reverse Bias ◽  
Incident Light ◽  
Response Speed ◽  
Light Wavelength ◽  
Cap Layer ◽  
Incident Light Wavelength

ABSTRACTAlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a –1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

2003 ◽  
Vol 82 (17) ◽  
pp. 2913-2915 ◽  
Author(s):  
M. L. Lee ◽  
J. K. Sheu ◽  
W. C. Lai ◽  
S. J. Chang ◽  
Y. K. Su ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer

GaN ON SILICON SUBSTRATE WITH AlN BUFFER LAYER FOR UV PHOTODIODE

2012 ◽  
Vol 21 (01) ◽  
pp. 1250014 ◽  
Author(s):  
L. S. CHUAH ◽  
S. M. THAHAB ◽  
Z. HASSAN
Keyword(s):  
Schottky Barrier ◽  
Buffer Layer ◽  
Barrier Height ◽  
Silicon Substrate ◽  
Dark Current ◽  
Schottky Barrier Height ◽  
Buffer Layers ◽  
Current Ratio ◽  
Principal Mechanism ◽  
Aln Buffer

Nitrogen plasma-assisted molecular beam epitaxy (PAMBE) deposited GaN thin films on (111) n-type silicon substrate with different thickness AlN buffer layers are investigated and distinguished by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman scattering. The thickness of AlN buffer layer ranged from 200 nm to 300 nm. Besides that, the electrical characteristics of the GaN thin film for ultraviolet detecting utilizations are studied by calculating the photo current/dark current ratio on a metal-semiconductor-metal (MSM) photodiode with and without the illumination of Hg-lamp source. The devices have been tested over room temperature (RT). The photocurrent analysis, together with the study of Schottky barrier height (SBH) development, ascertain that the principal mechanism of photo transport is thermionic emission. The photocurrent value is rigorously dependent on Schottky barrier height. The GaN/AlN(200 nm)/n-Si MSM photodiode produces the highest photo/dark current ratio for the lowest strain that consists of the GaN film grown on the AlN (200 nm) buffer layer.

GaN Schottky barrier photodiode on Si (111) with low-temperature-grown cap layer

2009 ◽  
Vol 481 (1-2) ◽  
pp. L15-L19 ◽  
Author(s):  
L.S. Chuah ◽  
Z. Hassan ◽  
H. Abu Hassan ◽  
N.M. Ahmed
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer

GaN Schottky Barrier Photodetectors with a Semi-Insulating AlInN Cap Layer

2010 ◽  
Vol 157 (4) ◽  
pp. J120 ◽  
Author(s):  
S. J. Chang ◽  
W. Y. Weng ◽  
W. C. Lai ◽  
T. J. Hsueh ◽  
S. C. Shei ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Cap Layer

Blocking injected dark current in impurity‐band‐conduction photodetectors using a PtSi Schottky barrier

1995 ◽  
Vol 67 (6) ◽  
pp. 774-776 ◽  
Author(s):  
B. G. Martin ◽  
R. W. Fathauer ◽  
E. W. Jones ◽  
T. N. Krabach ◽  
S. M. Dejewski
Keyword(s):  
Schottky Barrier ◽  
Dark Current ◽  
Impurity Band ◽  
Band Conduction

Rectifying characteristics of WSi0.8–GaN Schottky barrier diodes with a GaN cap layer grown at low temperature

2005 ◽  
Vol 98 (3) ◽  
pp. 036106
Author(s):  
J. K. Sheu ◽  
M. L. Lee ◽  
W. C. Lai ◽  
H. C. Tseng ◽  
G. C. Chi
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Cap Layer
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