Erratum: Dry etching process for fabrication of optoelectronic gratings in III-V substrates

1992 ◽  
Vol 28 (3) ◽  
pp. 338
Author(s):  
A.S. Gozdz ◽  
J.A. Shelburne ◽  
R.S. Robinson ◽  
C.C. Chang
Keyword(s):  
Dry Etching ◽  
Etching Process

scholarly journals Low-temperature smoothing method of scalloped DRIE trench by post-dry etching process based on SF6 plasma

2020 ◽  
Vol 8 (1) ◽  
Author(s):  
Jin Soo Park ◽  
Dong-Hyun Kang ◽  
Seung Min Kwak ◽  
Tae Song Kim ◽  
Jung Ho Park ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dry Etching ◽  
Smoothing Method ◽  
Etching Process

Grain size reduction by utilizing a very thin CrW seedlayer and dry-etching process in CoCrTaNiPt longitudinal media

2000 ◽  
Vol 87 (9) ◽  
pp. 6860-6862 ◽  
Author(s):  
Satoru Yoshimura ◽  
D. D. Djayaprawira ◽  
Tham Kim Kong ◽  
Yusuke Masuda ◽  
Hiroki Shoji ◽  
...  
Keyword(s):  
Grain Size ◽  
Dry Etching ◽  
Size Reduction ◽  
Etching Process

scholarly journals Dry Etching of Germanium with Laser Induced Reactive Micro Plasma

2021 ◽  
Author(s):  
Martin Ehrhardt ◽  
Pierre Lorenz ◽  
Jens Bauer ◽  
Robert Heinke ◽  
Mohammad Afaque Hossain ◽  
...  
Keyword(s):  
Ion Beam ◽  
Etching Rate ◽  
Dry Etching ◽  
Etching Process ◽  
High Tech ◽  
Etching Time ◽  
High Quality ◽  
Machined Surface ◽  
Reactive Plasma ◽  
New Processing

AbstractHigh-quality, ultra-precise processing of surfaces is of high importance for high-tech industry and requires a good depth control of processing, a low roughness of the machined surface and as little as possible surface and subsurface damage but cannot be realized by laser ablation processes. Contrary, electron/ion beam, plasma processes and dry etching are utilized in microelectronics, optics and photonics. Here, we have demonstrated a laser-induced plasma (LIP) etching of single crystalline germanium by an optically pumped reactive plasma, resulting in high quality etching. A Ti:Sapphire laser (λ = 775 nm, EPulse/max. = 1 mJ, t = 150 fs, frep. = 1 kHz) has been used, after focusing with a 60 mm lens, for igniting a temporary plasma in a CF4/O2 gas at near atmospheric pressure. Typical etching rate of approximately ~ 100 nm / min and a surface roughness of less than 11 nm rms were found. The etching results were studied in dependence on laser pulse energy, etching time, and plasma – surface distance. The mechanism of the etching process is expected to be of chemical nature by the formation of volatile products from the chemical reaction of laser plasma activated species with the germanium surface. This proposed laser etching process can provide new processing capabilities of materials for ultra—high precision laser machining of semiconducting materials as can applied for infrared optics machining.

Advanced Cr dry etching process

1999 ◽  
Author(s):  
Satoshi Aoyama ◽  
Shouichi Sakamoto ◽  
Tsutomu Koike ◽  
Nobuyuki Yoshioka ◽  
Noriyuki Harashima ◽  
...  
Keyword(s):  
Dry Etching ◽  
Etching Process
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