A practical PZT dry etching process that increases the top electrode contact reliability in pyroelectric detector arrays by using a MORI/sup TM/ high density plasma system

2001 ◽  
Author(s):  
D.J. Thomas ◽  
Y.P. Song ◽  
K. Powell ◽  
R. Bruchhaus
Keyword(s):  
Dry Etching ◽  
High Density ◽  
Etching Process ◽  
Pyroelectric Detector ◽  
Plasma System ◽  
Detector Arrays ◽  
Electrode Contact ◽  
Density Plasma

Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe

1999 ◽  
Vol 28 (4) ◽  
pp. 347-354 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
J. R. Meyer ◽  
C. A. Hoffman ◽  
...  
Keyword(s):  
Plasma Etching ◽  
High Density ◽  
Etching Process ◽  
Plasma Etching Process ◽  
Density Plasma

scholarly journals Etch Processing of III-V Nitrides

1999 ◽  
Vol 4 (S1) ◽  
pp. 902-913 ◽  
Author(s):  
Charles R. Eddy
Keyword(s):  
Plasma Etching ◽  
Microwave Power ◽  
Ohmic Contacts ◽  
High Density ◽  
Etching Process ◽  
Ion Energy ◽  
Plasma Etching Process ◽  
Device Processing ◽  
The Impact ◽  
Density Plasma

As III-V nitride devices advance in technological importance, a fundamental understanding of device processing techniques becomes essential. Recent works have exposed various aspects of etch processes. The most recent advances and the greatest remaining challenges in the etching of GaN, AlN, and InN are reviewed. A more detailed presentation is given with respect to GaN high density plasma etching. In particular, the results of parametric and fundamental studies of GaN etching in a high density plasma are described. The effect of ion energy and mass on surface electronic properties is reported. Experimental results identify preferential sputtering as the leading cause of observed surface non-stoichiometry. This mechanism provides excellent surfaces for ohmic contacts to n-type GaN, but presents a major obstacle for Schottky contacts or ohmic contacts to p-type GaN. Chlorine-based discharges minimize this stoichiometry problem by improving the rate of gallium removal from the surface. In an effort to better understand the high density plasma etching process for GaN, in-situ mass spectrometry is employed to study the chlorine-based high density plasma etching process. Gallium chloride mass peaks were monitored in a highly surface sensitive geometry as a function of microwave power (ion flux), total pressure (neutral flux), and ion energy. Microwave power and pressure dependencies clearly demonstrate the importance of reactive ions in the etching of wide band gap materials. The ion energy dependence demonstrates the importance of adequate ion energy to promote a reasonable etch rate (≥100-150 eV). The benefits of ion-assisted chemical etching are diminished for ion energies in excess of 350 V, placing an upper limit to the useful ion energy range for etching GaN. The impact of these results on device processing will be discussed and future needs identified.

Study of plasma - surface interactions: chemical dry etching and high-density plasma etching

1996 ◽  
Vol 5 (2) ◽  
pp. 193-199 ◽  
Author(s):  
G S Oehrlein ◽  
P J Matsuo ◽  
M F Doemling ◽  
N R Rueger ◽  
B E E Kastenmeier ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Dry Etching ◽  
Surface Interactions ◽  
High Density ◽  
Plasma Surface ◽  
Plasma Surface Interactions ◽  
Density Plasma

Vertical and Smooth Microfabrication of InP Using Simple High-Density Plasma System with SmCo Ring Magnet

2004 ◽  
Vol 43 (No. 7B) ◽  
pp. L960-L962 ◽  
Author(s):  
Akihiro Matsutani ◽  
Hideo Ohtsuki ◽  
Ken Ohashi ◽  
Tomonori Yokoyama ◽  
Hirokazu Yamakage ◽  
...  
Keyword(s):  
High Density ◽  
Plasma System ◽  
Ring Magnet ◽  
Density Plasma

Etch Processing of III-V Nitrides

1998 ◽  
Vol 537 ◽  
Author(s):  
Charles R. Eddy
Keyword(s):  
Plasma Etching ◽  
Microwave Power ◽  
Ohmic Contacts ◽  
High Density ◽  
Etching Process ◽  
Ion Energy ◽  
Plasma Etching Process ◽  
Device Processing ◽  
The Impact ◽  
Density Plasma

AbstractAs III-V nitride devices advance in technological importance, a fundamental understanding of device processing techniques becomes essential. Recent works have exposed various aspects of etch processes. The most recent advances and the greatest remaining challenges in the etching of GaN, AIN, and InN are reviewed. A more detailed presentation is given with respect to GaN high density plasma etching. In particular, the results of parametric and fundamental studies of GaN etching in a high density plasma are described. The effect of ion energy and mass on surface electronic properties is reported. Experimental results identify preferential sputtering as the leading cause of observed surface non-stoichiometry. This mechanism provides excellent surfaces for ohmic contacts to n-type GaN, but presents a major obstacle for Schottky contacts or ohmic contacts to p-type GaN. Chlorine-based discharges minimize this stoichiometry problem by improving the rate of gallium removal from the surface. In an effort to better understand the high density plasma etching process for GaN, in-situ mass spectrometry is employed to study the chlorine-based high density plasma etching process. Gallium chloride mass peaks were monitored in a highly surface sensitive geometry as a function of microwave power (ion flux), total pressure (neutral flux), and ion energy. Microwave power and pressure dependencies clearly demonstrate the importance of reactive ions in the etching of wide band gap materials. The ion energy dependence demonstrates the importance of adequate ion energy to promote a reasonable etch rate (≥ 100-150 eV). The benefits of ion-assisted chemical etching are diminished for ion energies in excess of 350 V, placing an upper limit to the useful ion energy range for etching GaN. The impact of these results on device processing will be discussed and future needs identified.

Dry etching technology of Cr and MoSi layers using high-density plasma source

2001 ◽  
Author(s):  
Hyuk-Joo Kwon ◽  
Kwang-Sik Oh ◽  
Byung-Soo Chang ◽  
Boo-Yeon Choi ◽  
Kyung-Ho Park ◽  
...  
Keyword(s):  
Plasma Source ◽  
Dry Etching ◽  
High Density ◽  
Density Plasma
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