Room temperature negative differential resistance in a triple well rectifying resonant tunnelling diode

1990 ◽  
Vol 26 (15) ◽  
pp. 1163
Author(s):  
C.R. Bolognesi ◽  
R.S. Mand ◽  
A.R. Boothroyd
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Resonant Tunnelling ◽  
Resonant Tunnelling Diode

Resonant Tunnelling Behaviour in Multilayered Cold Cathodes Made of Nanoseeded Diamond and Nanocluster Carbon

2001 ◽  
Vol 676 ◽  
Author(s):  
B.S. Satyanarayana ◽  
A. Hiraki
Keyword(s):  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Carbon Film ◽  
Differential Resistance ◽  
Carbon Films ◽  
Nanocrystalline Diamond ◽  
Resonant Tunnelling ◽  
Cold Cathodes ◽  
Cathodic Arc

ABSTRACTMultilayered cold cathodes made of spin coated nanocrystalline diamond and cathodic arc process grown nanocluster carbon films, were studied. The nanocrystalline diamond was first coated on to the substrate. The nanocluster carbon films were then deposited on the seeded nanocrystalline diamond coated substrates using the cathodic arc process at room temperature. Theresultant hetrostructured microcathodes were observed to exhibit electron emission currents of 1μA/cm2 at fields as low as 1.2 V/μm. Further some of the samples seem to exhibit I-V characteristics witha negative differential resistance region at room temperature conditions. This negative differential resistance or the resonant tunneling behaviour was observed to be dependent on the nanoseeded diamond size and concentration for a given nanocluster carbon film.

Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures

1987 ◽  
Vol 23 (3) ◽  
pp. 116 ◽  
Author(s):  
M. Razeghi ◽  
A. Tardella ◽  
R.A. Davies ◽  
A.P. Long ◽  
M.J. Kelly ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Double Barrier ◽  
Resonant Tunnelling

Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface

ACS Nano ◽  
2019 ◽  
Vol 13 (7) ◽  
pp. 8193-8201 ◽  
Author(s):  
Sidi Fan ◽  
Quoc An Vu ◽  
Sanghyub Lee ◽  
Thanh Luan Phan ◽  
Gyeongtak Han ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Van Der Waals ◽  
Differential Resistance ◽  
Van Der Waals Heterostructures

Room temperature negative differential resistance in molecular nanowires

2002 ◽  
Vol 12 (10) ◽  
pp. 2927-2930 ◽  
Author(s):  
Irena Kratochvilova ◽  
Milan Kocirik ◽  
Adriana Zambova ◽  
Jeremiah Mbindyo ◽  
Thomas E. Mallouk ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance

scholarly journals Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn
Keyword(s):  
Schottky Diode ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Differential Resistance ◽  
Tunneling Effect ◽  
Peak Current Density ◽  
Interband Tunneling ◽  
First Time ◽  
Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

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