Study of interface state generation in thin oxynitride gate dielectrics under hot-electron stressing

1989 ◽  
Vol 25 (20) ◽  
pp. 1354 ◽  
Author(s):  
G.Q. Lo ◽  
W.C. Ting ◽  
D.K. Shih ◽  
D.L.K. Wong
Keyword(s):  
Gate Dielectrics ◽  
Interface State ◽  
Hot Electron ◽  
State Generation

Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2395-L2397 ◽  
Author(s):  
Naoki Yasuda ◽  
Hiroshi Nakamura ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi ◽  
Masakazu Kakumu
Keyword(s):  
Electron Injection ◽  
Interface State ◽  
Generation Mechanism ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
State Generation

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

1995 ◽  
Vol 387 ◽  
Author(s):  
L. K. Han ◽  
M. Bhat ◽  
J. Yan ◽  
D. Wristers ◽  
D. L. Kwong
Keyword(s):  
Gate Dielectric ◽  
Defect Density ◽  
Gate Dielectrics ◽  
Charge Trapping ◽  
Interface State ◽  
High Quality ◽  
Hot Carrier ◽  
Thermal Oxide ◽  
State Generation

AbstractThis paper reports on the formation of high quality ultrathin oxynitride gate dielectric by in-situ rapid thermal multiprocessing. Four such gate dielectrics are discussed here; (i) in-situ NO-annealed SiO2, (ii) N2O- or NO- or O2-grown bottom oxide/RTCVD SiO2/thermal oxide, (iii) N2O-grown bottom oxide/Si3N4/N2O-oxide (ONO) and (iv) N2O-grown bottom oxide/RTCVD SiO2/N2O-oxide. Results show that capacitors with NO-based oxynitride gate dielectrics, stacked oxynitride gate dielectrics with varying quality of bottom oxide (O2/N2O/NO), and the ONO structures show high endurance to interface degradation, low defect-density and high charge-to-breakdown compared to thermal oxide. The N2O-last reoxidation step used in the stacked dielectrics and ONO structures is seen to suppress charge trapping and interface state generation under Fowler-Nordheim injection. The stacked oxynitride gate dielectrics also show excellent MOSFET performance in terms of transconductance and mobility. While the current drivability and mobilities are found to be comparable to thermal oxide for N-channel MOSFET's, the hot-carrier immunity of N-channel MOSFET's with the N2O-oxide/CVD-SiO2/N2O-oxide gate dielectrics is found to be significantly enhanced over that of conventional thermal oxide.

Structure and Growth of N2O Gate Oxynitrides

1996 ◽  
Vol 428 ◽  
Author(s):  
K. A. Ellis ◽  
E. C. Carr ◽  
R. A. Buhrman
Keyword(s):  
Flow Rate ◽  
Atomic Oxygen ◽  
Gate Dielectrics ◽  
Total Concentration ◽  
Nitrogen Sources ◽  
Interface State ◽  
Silicon Oxynitride ◽  
Nitrogen Incorporation ◽  
Exothermic Decomposition ◽  
State Generation

AbstractA series of investigations have been conducted into the properties of N2O silicon oxynitride gate dielectrics, and the various methods of their growth. One of the principle advantages of these oxides is their resistance to interface state generation. This is linked to the presense of nitrogen near the substrate interface, where it is triply bonded to silicon. It is also demonstrated that during N2O-based furnace growth, the total concentration of NOx species varies strongly with the flow rate of N2O. This has been correlated to the temperature profile of the furnace, which can be affected by the exothermic decomposition of N2O. This property has been exploited to controllably adjust the rate of nitrogen incorporation by up to a factor of three. Although nitrogen incorporation during furnace processing is generally stable, it is shown that atomic oxygen is capable of removing previously incorporated nitrogen. Sources of atomic oxygen include the decomposition of N2O during RTP treatment, N2O processing in a high flow rate furnace, or from ozone annealing.

Gate Oxynitride Grown in N2O and Annealed in NO Using Rapid Thermal Processing

1995 ◽  
Vol 387 ◽  
Author(s):  
S. C. Sun ◽  
C. H. Chen ◽  
J. C. Lou ◽  
L. W. Yen ◽  
C. J. Lin
Keyword(s):  
Gate Dielectrics ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Interface State ◽  
No Oxidation ◽  
Nitrogen Accumulation ◽  
Electrical Stress ◽  
Wide Range ◽  
State Generation ◽  
Stress Induced Leakage Current

AbstractIn this paper a new technique for the formation of high quality ultrathin gate dielectrics is proposed. Gate oxynitride was first grown in N2O and then annealed by in-situ rapid thermal NO-nitridation. This approach has the advantage of providing a tighter nitrogen distribution and a higher nitrogen accumulation at or near the Si-SiO2 interface than either N2O oxynitride or nitridation of SiO2 in the NO ambient. It is applicable to a wide range of oxide thickness because the initial rapid thermal N2O oxidation rate is slow but not as self-limited as NO oxidation. The resulting gate dielectrics have reduced charge trapping, lower stress-induced leakage current and significant resistance to interface state generation under electrical stress

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