Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm

1988 ◽  
Vol 24 (24) ◽  
pp. 1493 ◽  
Author(s):  
W. Stutius ◽  
P. Gavrilovic ◽  
J.E. Williams ◽  
K. Meehan ◽  
J.H. Zarrabi
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Continuous Operation ◽  
Quantum Well Lasers ◽  
Strained Layer

High-power 0.98-μm strained-layer quantum-well lasers with InGaP cladding

1994 ◽  
Vol 7 (3) ◽  
pp. 139-143 ◽  
Author(s):  
Tetsuro Ijichi ◽  
Michio Ohkubo ◽  
Akira Iketani ◽  
Toshio Kikuta
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Strained Layer

High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers

1990 ◽  
Vol 57 (26) ◽  
pp. 2762-2763 ◽  
Author(s):  
T. R. Chen ◽  
L. E. Eng ◽  
Y. H. Zhuang ◽  
Y. J. Xu ◽  
H. Zaren ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
High Power Operation ◽  
Power Operation

Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05 μm

1998 ◽  
Author(s):  
Hong K. Choi ◽  
George W. Turner ◽  
James N. Walpole ◽  
M. J. Manfra ◽  
M. K. Connors ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
High Brightness ◽  
Low Threshold

High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200nm range

2010 ◽  
Vol 50 (5) ◽  
pp. 722-725 ◽  
Author(s):  
Hung-Pin D. Yang ◽  
Chih-Tsung Shih ◽  
Su-Mei Yang ◽  
Tsin-Dong Lee
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Broad Area
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