High-temperature CW operation of visible light-emitting GaInP/AlGaInP inner stripe laser diodes

1988 ◽  
Vol 24 (14) ◽  
pp. 877 ◽  
Author(s):  
H. Shiozawa ◽  
H. Okuda ◽  
M. Ishikawa ◽  
G.-I. Hatakoshi ◽  
Y. Uematsu
Keyword(s):  
High Temperature ◽  
Visible Light ◽  
Laser Diodes ◽  
Light Emitting ◽  
Cw Operation ◽  
Stripe Laser

High-Temperature CW Operation of 630nm Band InGaAlP Visible Light Laser Diodes

1990 ◽  
Author(s):  
K. Itaya ◽  
M. Ishikawa ◽  
H. Shiozawa ◽  
Y. Nishikawa ◽  
M. Suzuki ◽  
...  
Keyword(s):  
High Temperature ◽  
Visible Light ◽  
Laser Diodes ◽  
Cw Operation

CW operation at - 10°C for InGaAlP visible light laser diodes grown by MOCVD

1985 ◽  
Vol 21 (23) ◽  
pp. 1084 ◽  
Author(s):  
M. Ishikawa ◽  
Y. Ohba ◽  
H. Sugawara ◽  
M. Yamamoto ◽  
T. Nakanisi
Keyword(s):  
Visible Light ◽  
Laser Diodes ◽  
Cw Operation

High temperature (74 degrees C) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier

1993 ◽  
Vol 29 (6) ◽  
pp. 1857-1862 ◽  
Author(s):  
J. Rennie ◽  
M. Okajima ◽  
M. Watanabe ◽  
G. Hatakoshi
Keyword(s):  
High Temperature ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Cw Operation

High‐temperature operation of high‐power InGaAlP visible light laser diodes with an In0.5+δGa0.5−δP active layer

1991 ◽  
Vol 59 (2) ◽  
pp. 149-151 ◽  
Author(s):  
K. Nitta ◽  
K. Itaya ◽  
Y. Nishikawa ◽  
M. Ishikawa ◽  
M. Okajima ◽  
...  
Keyword(s):  
High Temperature ◽  
Visible Light ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
High Temperature Operation
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