High temperature (74 degrees C) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier

J. Rennie; M. Okajima; M. Watanabe; G. Hatakoshi

doi:10.1109/3.234444

High temperature (74 degrees C) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier

IEEE Journal of Quantum Electronics ◽

10.1109/3.234444 ◽

1993 ◽

Vol 29 (6) ◽

pp. 1857-1862 ◽

Cited By ~ 19

Author(s):

J. Rennie ◽

M. Okajima ◽

M. Watanabe ◽

G. Hatakoshi

Keyword(s):

High Temperature ◽

Laser Diodes ◽

Multiple Quantum ◽

Cw Operation

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High temperature (74°c) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier

13th IEEE International Semiconductor Laser Conference ◽

10.1109/islc.1992.763618 ◽

2005 ◽

Cited By ~ 2

Author(s):

J. Rennie ◽

M. Okajima ◽

M. Watanabe ◽

G. Hatakoshi

Keyword(s):

High Temperature ◽

Laser Diodes ◽

Multiple Quantum ◽

Cw Operation

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High-Temperature and Low-Threshold-Current Operation of 1.5 µm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.3309 ◽

1998 ◽

Vol 37 (Part 1, No. 6A) ◽

pp. 3309-3312 ◽

Cited By ~ 4

Author(s):

Chia-Chien Lin ◽

Kuo-Shung Liu ◽

Meng-Chyi Wu ◽

Hung-Pin Shiao

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Low Threshold ◽

Current Operation ◽

Multiple Quantum Well Laser

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High-Temperature CW Operation of 630nm Band InGaAlP Visible Light Laser Diodes

10.7567/ssdm.1990.d-4-7 ◽

1990 ◽

Author(s):

K. Itaya ◽

M. Ishikawa ◽

H. Shiozawa ◽

Y. Nishikawa ◽

M. Suzuki ◽

...

Keyword(s):

High Temperature ◽

Visible Light ◽

Laser Diodes ◽

Cw Operation

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High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes

Applied Physics Letters ◽

10.1063/1.105723 ◽

1991 ◽

Vol 59 (26) ◽

pp. 3351-3353 ◽

Cited By ~ 35

Author(s):

T. Katsuyama ◽

I. Yoshida ◽

J. Shinkai ◽

J. Hashimoto ◽

H. Hayashi

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Visible Laser ◽

Low Threshold ◽

Current Operation

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Room-Temperature CW Operation of GaN-Based Blue-Violet Laser Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown Single-Crystal AlN Buffer Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.73 ◽

2006 ◽

Vol 45 (1A) ◽

pp. 73-75 ◽

Cited By ~ 5

Author(s):

Yasuo Ohba ◽

Susumu Iida ◽

Sinya Nunoue

Keyword(s):

High Temperature ◽

Single Crystal ◽

Buffer Layer ◽

Sapphire Substrate ◽

Room Temperature ◽

Laser Diodes ◽

Cw Operation ◽

Aln Buffer ◽

Grown Single Crystal

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Reliable high-temperature 50-70 mW CW operation of 659-nm window-mirror laser diodes

Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) ◽

10.1109/islc.1998.734116 ◽

2002 ◽

Cited By ~ 1

Author(s):

Y. Sakamoto ◽

A. Shima ◽

M. Hironaka ◽

K. Ono ◽

M. Takemi ◽

...

Keyword(s):

High Temperature ◽

Laser Diodes ◽

Cw Operation

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Room-Temperature CW Operation of GaInN Multiple Quantum Well Laser Diodes with Optimized Indium Content

phys stat sol (a) ◽

10.1002/(sici)1521-396x(199911)176:1<53::aid-pssa53>3.0.co;2-a ◽

1999 ◽

Vol 176 (1) ◽

pp. 53-57 ◽

Cited By ~ 2

Author(s):

A. Tsujimura ◽

A. Ishibashi ◽

Y. Hasegawa ◽

S. Kamiyama ◽

I. Kidoguchi ◽

...

Keyword(s):

Quantum Well ◽

Room Temperature ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Indium Content ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Cw Operation ◽

Multiple Quantum Well Laser

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Low threshold current and high temperature operation of 1.55 [micro sign]m strain-compensated multiple quantum well AlInAs/AlGaInAs laser diodes

Electronics Letters ◽

10.1049/el:19981256 ◽

1998 ◽

Vol 34 (17) ◽

pp. 1667 ◽

Cited By ~ 8

Author(s):

Chia-Chien Lin ◽

Kuo-Shung Liu ◽

Meng-Chyi Wu ◽

Hung-Pin Shiao

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Low Threshold ◽

High Temperature Operation

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Uniform lasing characteristics of 1.3-μm multiple quantum-well Fabry-Perot laser diodes over a 2-in.-diameter wafer with excellent high-temperature operation

Optical Fiber Communication ◽

10.1364/ofc.1991.wm11 ◽

1991 ◽

Author(s):

H. Kamei ◽

H. Hayashi ◽

Y. Michitsuji ◽

M. Takahashi ◽

M. Maeda ◽

...

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Multiple Quantum ◽

Fabry Perot ◽

High Temperature Operation

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High-temperature CW operation of visible light-emitting GaInP/AlGaInP inner stripe laser diodes

Electronics Letters ◽

10.1049/el:19880598 ◽

1988 ◽

Vol 24 (14) ◽

pp. 877 ◽

Cited By ~ 12

Author(s):

H. Shiozawa ◽

H. Okuda ◽

M. Ishikawa ◽

G.-I. Hatakoshi ◽

Y. Uematsu

Keyword(s):

High Temperature ◽

Visible Light ◽

Laser Diodes ◽

Light Emitting ◽

Cw Operation ◽

Stripe Laser

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