High‐temperature operation of high‐power InGaAlP visible light laser diodes with an In0.5+δGa0.5−δP active layer

1991 ◽  
Vol 59 (2) ◽  
pp. 149-151 ◽  
Author(s):  
K. Nitta ◽  
K. Itaya ◽  
Y. Nishikawa ◽  
M. Ishikawa ◽  
M. Okajima ◽  
...  
Keyword(s):  
High Temperature ◽  
Visible Light ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
High Temperature Operation

High-temperature operation of high-power InGaAlP visible laser diodes

1993 ◽  
Author(s):  
Gen-ichi Hatakoshi ◽  
Koichi Nittoh ◽  
Yukie Nishikawa ◽  
Kazuhiko Itaya ◽  
Masaki Okajima
Keyword(s):  
High Temperature ◽  
High Power ◽  
Laser Diodes ◽  
Visible Laser ◽  
High Temperature Operation

High-power and high-temperature operation of Mg-doped AlGaInP-based red laser diodes

2004 ◽  
Vol 40 (12) ◽  
pp. 1634-1638 ◽  
Author(s):  
T. Onishi ◽  
K. Inoue ◽  
K. Onozawa ◽  
T. Takayama ◽  
M. Yuri
Keyword(s):  
High Temperature ◽  
High Power ◽  
Laser Diodes ◽  
High Temperature Operation ◽  
Mg Doped

High Power Operation of InGaAlP Visible Light Laser Diodes with an In0.62Ga0.38P Active Layer

1991 ◽  
Author(s):  
K. Nitta ◽  
K. Itaya ◽  
Y. Nishikawa ◽  
M. Ishikawa ◽  
M. Okajima ◽  
...  
Keyword(s):  
Visible Light ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
High Power Operation ◽  
Power Operation

Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3862-3864 ◽  
Author(s):  
Koichi Nitta ◽  
Kazuhiko Itaya ◽  
Yukie Nishikawa ◽  
Masayuki Ishikawa ◽  
Masaki Okajima ◽  
...  
Keyword(s):  
Visible Light ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
High Power Operation ◽  
Power Operation

High power and high temperature operation of 660 nm AlGaInP laser diodes for DVD-R/RW

2003 ◽  
Author(s):  
Yasuaki Yoshida ◽  
Harumi Nishiguchi ◽  
Motoko Sasaki ◽  
Sinji Abe ◽  
Akihito Ohno ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Laser Diodes ◽  
High Temperature Operation

Reliable high-power (40 mW) operation of transverse-mode stabilised InGaAlP laser diodes with strained active layer

1992 ◽  
Vol 28 (11) ◽  
pp. 1069-1070 ◽  
Author(s):  
K. Nitta ◽  
M. Okajima ◽  
Y. Nishikawa ◽  
K. Itaya ◽  
G. Hatakoshi
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Transverse Mode
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