Eleven-bit parity generator with a single, vertically integrated resonant tunnelling device

1988 ◽  
Vol 24 (11) ◽  
pp. 681-683 ◽  
Author(s):  
A.A. Lakhani ◽  
R.C. Potter ◽  
H.S. Hier
Keyword(s):  
Resonant Tunnelling ◽  
Parity Generator

Parity generator circuit using a multistate resonant tunnelling bipolar transistor

1988 ◽  
Vol 24 (24) ◽  
pp. 1506 ◽  
Author(s):  
S. Sen ◽  
F. Capasso ◽  
A.Y. Cho ◽  
D.L. Sivco
Keyword(s):  
Bipolar Transistor ◽  
Resonant Tunnelling ◽  
Generator Circuit ◽  
Parity Generator

Resonant tunnelling in AlInas/GaInAs double barrier diodes grown by MOCVD

1988 ◽  
Vol 24 (3) ◽  
pp. 187 ◽  
Author(s):  
P.D. Hodson ◽  
D.J. Robbins ◽  
R.H. Wallis ◽  
J.I. Davies ◽  
A.C. Marshall
Keyword(s):  
Double Barrier ◽  
Resonant Tunnelling

Resonant-tunnelling diode oscillator using a slot-coupled quasioptical open resonator

1991 ◽  
Vol 27 (8) ◽  
pp. 647 ◽  
Author(s):  
K.D. Stephan ◽  
E.R. Brown ◽  
C.D. Parker ◽  
W.D. Goodhue ◽  
C.L. Chen ◽  
...  
Keyword(s):  
Open Resonator ◽  
Resonant Tunnelling ◽  
Diode Oscillator ◽  
Resonant Tunnelling Diode

Erratum: Variable-area resonant tunnelling diodes using implanted gates

1992 ◽  
Vol 28 (18) ◽  
pp. 1772
Author(s):  
C.J. Goodings ◽  
J.R.A. Cleaver ◽  
H. Ahmed
Keyword(s):  
Resonant Tunnelling

scholarly journals All-Optical Non-Inverted Parity Generator and Checker Based on Semiconductor Optical Amplifiers

2021 ◽  
Vol 11 (4) ◽  
pp. 1499
Author(s):  
Bingchen Han ◽  
Junyu Xu ◽  
Pengfei Chen ◽  
Rongrong Guo ◽  
Yuanqi Gu ◽  
...  
Keyword(s):  
Optical Amplifiers ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Extinction Ratio ◽  
Semiconductor Optical Amplifiers ◽  
Optical Signal ◽  
Probe Light ◽  
All Optical ◽  
Negative Effect ◽  
Parity Generator

An all-optical non-inverted parity generator and checker based on semiconductor optical amplifiers (SOAs) are proposed with four-wave mixing (FWM) and cross-gain modulation (XGM) non-linear effects. A 2-bit parity generator and checker using by exclusive NOR (XNOR) and exclusive OR (XOR) gates are implemented by first SOA and second SOA with 10 Gb/s return-to-zero (RZ) code, respectively. The parity and check bits are provided by adjusting the center wavelength of the tunable optical bandpass filter (TOBPF). A saturable absorber (SA) is used to reduce the negative effect of small signal clock (Clk) probe light to improve extinction ratio (ER) and optical signal-to-noise ratio (OSNR). For Pe and Ce (even parity bit and even check bit) without Clk probe light, ER and OSNR still maintain good performance because of the amplified effect of SOA. For Po (odd parity bit), ER and OSNR are improved to 1 dB difference for the original value. For Co (odd check bit), ER is deteriorated by 4 dB without SA, while OSNR is deteriorated by 12 dB. ER and OSNR are improved by about 2 dB for the original value with the SA. This design has the advantages of simple structure and great integration capability and low cost.

High-speed operation of resonant tunnelling flip-flop circuit employing MOBILE (monostable-bistable transition logic element)

1997 ◽  
Vol 33 (20) ◽  
pp. 1733 ◽  
Author(s):  
K. Maezawa ◽  
H. Matsuzaki ◽  
K. Arai ◽  
T. Otsuji ◽  
M. Yamamoto
Keyword(s):  
High Speed ◽  
Logic Element ◽  
Flip Flop ◽  
Resonant Tunnelling
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